IRFR010PBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

250pF @ 25V

Number of Terminations :

2

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Tin (Sn)

Case Connection :

DRAIN

Number of Channels :

1

Gate Charge (Qg) (Max) @ Vgs :

10nC @ 10V

Peak Reflow Temperature (Cel) :

250

Weight :

1.437803g

Drain to Source Breakdown Voltage :

60V

Time@Peak Reflow Temperature-Max (s) :

40

JESD-30 Code :

R-PSSO-G2

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

25W Tc

Terminal Form :

Gull wing

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

Radiation Hardening :

No

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

20V

Drain-source On Resistance-Max :

0.2Ohm

Rds On (Max) @ Id, Vgs :

200m Ω @ 4.6A, 10V

Power Dissipation :

25W

Number of Pins :

3

ECCN Code :

EAR99

Published :

2016

RoHS Status :

ROHS3 Compliant

Rise Time :

50ns

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Continuous Drain Current (ID) :

8.2A

Turn On Delay Time :

10 ns

Packaging :

Tube

Transistor Application :

SWITCHING

Mount :

Surface Mount

Fall Time (Typ) :

19 ns

Turn-Off Delay Time :

13 ns

Factory Lead Time :

8 Weeks

Current - Continuous Drain (Id) @ 25°C :

8.2A Tc

Pin Count :

3

Pbfree Code :

yes

Mounting Type :

Surface Mount

Drain to Source Voltage (Vdss) :

50V

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

4V @ 250µA

Drive Voltage (Max Rds On,Min Rds On) :

10V