IRFR3505PBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~175°C TJ

ECCN Code :

EAR99

Pulsed Drain Current-Max (IDM) :

280A

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

2030pF @ 25V

Published :

2002

Peak Reflow Temperature (Cel) :

260

Lead Free :

Lead Free

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Threshold Voltage :

4V

Contact Plating :

Tin

Case Connection :

DRAIN

Voltage - Rated DC :

55V

Radiation Hardening :

No

Power Dissipation :

140W

Number of Pins :

3

REACH SVHC :

No SVHC

Number of Terminations :

2

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

4V @ 250µA

Dual Supply Voltage :

55V

JEDEC-95 Code :

TO-252AA

Rds On (Max) @ Id, Vgs :

13m Ω @ 30A, 10V

Gate Charge (Qg) (Max) @ Vgs :

93nC @ 10V

Element Configuration :

Single

Time@Peak Reflow Temperature-Max (s) :

30

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Packaging :

Tube

Nominal Vgs :

4 V

JESD-30 Code :

R-PSSO-G2

Number of Elements :

1

Turn On Delay Time :

13 ns

Transistor Application :

SWITCHING

Vgs (Max) :

±20V

Turn-Off Delay Time :

43 ns

RoHS Status :

RoHS Compliant

Transistor Element Material :

SILICON

Mount :

Surface Mount

Rise Time :

74ns

Resistance :

13mOhm

Power Dissipation-Max :

140W Tc

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

20V

JESD-609 Code :

e3

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

71A

Drain to Source Breakdown Voltage :

55V

Series :

HEXFET®

Drive Voltage (Max Rds On,Min Rds On) :

10V

Fall Time (Typ) :

54 ns

Terminal Form :

Gull wing

Width :

6.22mm

Height :

2.3876mm

Current Rating :

71A

Length :

6.7056mm