IRFR3410TRPBF

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Mfr.Part #
IRFR3410TRPBF
Manufacturer
International Rectifier
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
IRFR3410 - 12V-300V N-CHANNEL PO
Stock
25,887
In Stock :
25,887

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Manufacturer :
International Rectifier
Product Category :
Transistors - FETs, MOSFETs - Single
Voltage - Rated DC :
100V
Gate to Source Voltage (Vgs) :
20V
Turn On Delay Time :
12 ns
Number of Elements :
1
ECCN Code :
EAR99
Time@Peak Reflow Temperature-Max (s) :
30
JESD-609 Code :
e3
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Published :
2004
Height :
2.3876mm
Threshold Voltage :
4V
Factory Lead Time :
12 Weeks
Power Dissipation-Max :
3W Ta 110W Tc
Operating Mode :
ENHANCEMENT MODE
Rise Time :
27ns
Drain to Source Breakdown Voltage :
100V
Input Capacitance (Ciss) (Max) @ Vds :
1690pF @ 25V
Gate Charge (Qg) (Max) @ Vgs :
56nC @ 10V
Turn-Off Delay Time :
40 ns
Length :
6.7056mm
Lead Free :
Lead Free
Series :
HEXFET®
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Element Material :
SILICON
Case Connection :
DRAIN
Dual Supply Voltage :
100V
Nominal Vgs :
4 V
Number of Pins :
3
Current - Continuous Drain (Id) @ 25°C :
31A Tc
Drive Voltage (Max Rds On,Min Rds On) :
10V
Width :
6.22mm
Resistance :
39mOhm
Fall Time (Typ) :
13 ns
Continuous Drain Current (ID) :
31A
Packaging :
Tape and Reel (TR)
Number of Terminations :
2
Radiation Hardening :
No
Power Dissipation :
110W
JEDEC-95 Code :
TO-252AA
JESD-30 Code :
R-PSSO-G2
Element Configuration :
Single
Operating Temperature :
-55°C~175°C TJ
Terminal Form :
Gull wing
Vgs (Max) :
±20V
Mount :
Surface Mount
Mounting Type :
Surface Mount
Peak Reflow Temperature (Cel) :
260
Contact Plating :
Tin
Vgs(th) (Max) @ Id :
4V @ 250µA
REACH SVHC :
No SVHC
Transistor Application :
SWITCHING
FET Type :
N-Channel
RoHS Status :
ROHS3 Compliant
Rds On (Max) @ Id, Vgs :
39m Ω @ 18A, 10V
Termination :
SMD/SMT
Current Rating :
31A
Datasheets
IRFR3410TRPBF
Introducing Transistors - FETs, MOSFETs - Single International Rectifier IRFR3410TRPBF from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Number of Pins:3, Number of Terminations:2, Operating Temperature:-55°C~175°C TJ, Mounting Type:Surface Mount, IRFR3410TRPBF pinout, IRFR3410TRPBF datasheet PDF, IRFR3410TRPBF amp .Beyond Transistors - FETs, MOSFETs - Single International Rectifier IRFR3410TRPBF ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.



N-Channel Tape & Reel (TR) 39m Ω @ 18A, 10V ±20V 1690pF @ 25V 56nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63

Description


A single N-channel Power MOSFET with a low gate-to-drain charge to lower switching losses is the IRFR3410TRPBF from the HEXFET? family. High-frequency DC-to-DC converters can use it. An N-Channel MOSFET makes a current channel out of electrons. When the MOSFET is turned on and activated, this enables electrons to pass swiftly and readily through the current. Since of the unique properties of N-Channel MOSFETs, the P-Channel chip must be 2 to 3 times larger than the N-Channel chip because the mobility of the carriers is around 2 to 3 times higher for the same RDS(on) value. It is common practice to use MOSFET transistor N-Channels in high current applications because of this.



Features


  • Fully Characterized Capacitance Including Effective COSS to Simplify Design

  • Fully Characterized Avalanche Voltage and Current

  • Low Gate-to-Drain Charge to Reduce Switching Losses

  • Dynamic dV/dt Rating

  • Fast Switching

  • Fully Avalanche Rating



Applications


  • High Frequency DC-DC Converters

  • Lead-Free

  • Power Management

  • Small Motor Control

  • Solar Inverters

  • Automotive Applications


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