IRFR18N15DTRPBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

3

Lead Free :

Contains Lead, Lead Free

Number of Elements :

1

Dual Supply Voltage :

150V

Gate to Source Voltage (Vgs) :

30V

Continuous Drain Current (ID) :

18A

Rds On (Max) @ Id, Vgs :

125m Ω @ 11A, 10V

Vgs(th) (Max) @ Id :

5.5V @ 250µA

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Fall Time (Typ) :

9.8 ns

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Case Connection :

DRAIN

Avalanche Energy Rating (Eas) :

200 mJ

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

900pF @ 25V

Length :

6.7056mm

Radiation Hardening :

No

Turn On Delay Time :

8.8 ns

Power Dissipation-Max :

110W Tc

Published :

2004

Vgs (Max) :

±30V

Height :

2.3876mm

Width :

6.22mm

Current Rating :

18A

Terminal Form :

Gull wing

Mount :

Surface Mount

Threshold Voltage :

5.5V

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSSO-G2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

72A

JEDEC-95 Code :

TO-252AA

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Voltage - Rated DC :

150V

Time@Peak Reflow Temperature-Max (s) :

30

Resistance :

125mOhm

Nominal Vgs :

5.5 V

Peak Reflow Temperature (Cel) :

260

REACH SVHC :

No SVHC

JESD-609 Code :

e3

Rise Time :

25ns

Operating Temperature :

-55°C~175°C TJ

Drain to Source Breakdown Voltage :

150V

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

18A Tc

Power Dissipation :

110W

Gate Charge (Qg) (Max) @ Vgs :

43nC @ 10V

Turn-Off Delay Time :

15 ns

Transistor Application :

SWITCHING

Series :

HEXFET®

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminations :

2

Element Configuration :

Single

Mounting Type :

Surface Mount