IRFR120NTRRPBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

48W Tc

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Mounting Type :

Surface Mount

Number of Terminations :

2

Configuration :

SINGLE WITH BUILT-IN DIODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

330pF @ 25V

RoHS Status :

ROHS3 Compliant

Surface Mount :

yes

Peak Reflow Temperature (Cel) :

260

Transistor Element Material :

SILICON

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Drain to Source Voltage (Vdss) :

100V

Operating Temperature (Max) :

175°C

Time@Peak Reflow Temperature-Max (s) :

30

Number of Elements :

1

JESD-609 Code :

e3

Avalanche Energy Rating (Eas) :

91 mJ

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Drain Current-Max (Abs) (ID) :

9.4A

Reach Compliance Code :

not_compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Current - Continuous Drain (Id) @ 25°C :

9.4A Tc

JESD-30 Code :

R-PSSO-G2

Packaging :

Tape and Reel (TR)

Terminal Position :

Single

Vgs(th) (Max) @ Id :

4V @ 250µA

Pulsed Drain Current-Max (IDM) :

38A

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

JEDEC-95 Code :

TO-252AA

Qualification Status :

Not Qualified

Published :

2004

Series :

HEXFET®

DS Breakdown Voltage-Min :

100V

Rds On (Max) @ Id, Vgs :

210m Ω @ 5.6A, 10V

Additional Feature :

AVALANCHE RATED

Transistor Application :

SWITCHING

FET Type :

N-Channel

Drain-source On Resistance-Max :

0.21Ohm