IRFR1205TRPBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Surface Mount

Series :

HEXFET®

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Operating Temperature :

-55°C~175°C TJ

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

12 Weeks

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Drain Current-Max (Abs) (ID) :

20A

Number of Terminations :

2

Width :

6.8mm

Contact Plating :

Tin

Element Configuration :

Single

Rds On (Max) @ Id, Vgs :

27m Ω @ 26A, 10V

Voltage - Rated DC :

55V

Power Dissipation :

69W

Gate to Source Voltage (Vgs) :

20V

Threshold Voltage :

4V

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

Published :

2004

Drain to Source Breakdown Voltage :

55V

Dual Supply Voltage :

55V

FET Type :

N-Channel

Terminal Form :

Gull wing

Time@Peak Reflow Temperature-Max (s) :

30

Turn-Off Delay Time :

47 ns

Fall Time (Typ) :

60 ns

Packaging :

Tape and Reel (TR)

Termination :

SMD/SMT

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

4V @ 250µA

Turn On Delay Time :

7.3 ns

Rise Time :

69ns

Nominal Vgs :

4 V

Recovery Time :

98 ns

Mount :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

1300pF @ 25V

Lead Free :

Contains Lead, Lead Free

Number of Pins :

3

Height :

2.3876mm

REACH SVHC :

No SVHC

Additional Feature :

AVALANCHE RATED, ULTRA LOW RESISTANCE

Number of Elements :

1

Length :

6.7056mm

Current - Continuous Drain (Id) @ 25°C :

44A Tc

JEDEC-95 Code :

TO-252AA

Continuous Drain Current (ID) :

37A

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

65nC @ 10V

Current Rating :

37A

Power Dissipation-Max :

107W Tc

JESD-30 Code :

R-PSSO-G2

Resistance :

27mOhm

Peak Reflow Temperature (Cel) :

260