IRFIZ48NPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

89nC @ 10V

Series :

HEXFET®

Element Configuration :

Single

Vgs(th) (Max) @ Id :

4V @ 250µA

Transistor Element Material :

SILICON

Mount :

Through Hole

Gate to Source Voltage (Vgs) :

20V

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

16m Ω @ 22A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

78ns

Radiation Hardening :

No

JESD-609 Code :

e3

Published :

1996

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Number of Elements :

1

Current Rating :

36A

Power Dissipation :

42W

Recovery Time :

140 ns

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

36A

Mounting Type :

Through Hole

Nominal Vgs :

4 V

Current - Continuous Drain (Id) @ 25°C :

40A Tc

Avalanche Energy Rating (Eas) :

270 mJ

Operating Temperature :

-55°C~175°C TJ

Turn On Delay Time :

11 ns

Width :

4.826mm

Turn-Off Delay Time :

32 ns

JEDEC-95 Code :

TO-220AB

Height :

9.8mm

Number of Pins :

3

Voltage - Rated DC :

55V

REACH SVHC :

No SVHC

Input Capacitance (Ciss) (Max) @ Vds :

1900pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Factory Lead Time :

14 Weeks

Transistor Application :

SWITCHING

Fall Time (Typ) :

48 ns

Lead Free :

Lead Free

Power Dissipation-Max :

54W Tc

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Drain Current-Max (Abs) (ID) :

40A

Drain to Source Breakdown Voltage :

55V

Vgs (Max) :

±20V

Package / Case :

TO-220-3 Full Pack

Number of Terminations :

3

ECCN Code :

EAR99

Additional Feature :

AVALANCHE RATED

Length :

10.6172mm

Case Connection :

Isolated