IRFIZ48N

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

55V

Number of Terminations :

3

Packaging :

Tube

Vgs(th) (Max) @ Id :

4V @ 250µA

Drain to Source Voltage (Vdss) :

55V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Temperature :

-55°C~175°C TJ

Gate Charge (Qg) (Max) @ Vgs :

89nC @ 10V

RoHS Status :

Non-RoHS Compliant

Terminal Position :

Single

Mounting Type :

Through Hole

Surface Mount :

No

Drain Current-Max (Abs) (ID) :

36A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

ECCN Code :

EAR99

Pulsed Drain Current-Max (IDM) :

210A

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

16m Ω @ 22A, 10V

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JEDEC-95 Code :

TO-220AB

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-30 Code :

R-PSFM-T3

Series :

HEXFET®

Package / Case :

TO-220-3 Full Pack

Additional Feature :

AVALANCHE RATED

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

1900pF @ 25V

Case Connection :

Isolated

Published :

1996

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Drain-source On Resistance-Max :

0.016Ohm

Current - Continuous Drain (Id) @ 25°C :

36A Tc

Avalanche Energy Rating (Eas) :

270 mJ

Qualification Status :

Not Qualified

Power Dissipation-Max :

42W Tc

Configuration :

SINGLE WITH BUILT-IN DIODE