IRFIZ46NPBF
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- Mfr.Part #
- IRFIZ46NPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 55V 33A TO220AB FP
- Stock
- 2,458
- In Stock ：
- 2,458
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 1500pF @ 25V
- Radiation Hardening :
- No
- REACH SVHC :
- No SVHC
- Mount :
- Through Hole
- Current - Continuous Drain (Id) @ 25°C :
- 33A Tc
- Min Operating Temperature :
- -55°C
- Threshold Voltage :
- 4V
- Element Configuration :
- Single
- Gate to Source Voltage (Vgs) :
- 20V
- Mounting Type :
- Through Hole
- Fall Time (Typ) :
- 52 ns
- Max Operating Temperature :
- 175°C
- Power Dissipation :
- 40W
- Length :
- 10.6172mm
- RoHS Status :
- RoHS Compliant
- Width :
- 4.826mm
- Rise Time :
- 80ns
- Isolation Voltage :
- 2.5kV
- Rds On Max :
- 20 mΩ
- Number of Pins :
- 3
- Input Capacitance :
- 1.5nF
- Packaging :
- Tube
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Turn On Delay Time :
- 12 ns
- Drain to Source Breakdown Voltage :
- 55V
- Voltage - Rated DC :
- 55V
- Rds On (Max) @ Id, Vgs :
- 20mOhm @ 19A, 10V
- FET Type :
- N-Channel
- Power Dissipation-Max :
- 45W Tc
- Package / Case :
- TO-220-3 Full Pack
- Published :
- 1997
- Height :
- 9.8mm
- Continuous Drain Current (ID) :
- 33A
- Operating Temperature :
- -55°C~175°C TJ
- Series :
- HEXFET®
- Lead Free :
- Lead Free
- Vgs (Max) :
- ±20V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain to Source Voltage (Vdss) :
- 55V
- Drain to Source Resistance :
- 20mOhm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Nominal Vgs :
- 4 V
- Turn-Off Delay Time :
- 43 ns
- Supplier Device Package :
- TO-220AB Full-Pak
- Gate Charge (Qg) (Max) @ Vgs :
- 61nC @ 10V
- Current Rating :
- 31A
- Datasheets
- IRFIZ46NPBF
N-Channel Tube 20mOhm @ 19A, 10V ±20V 1500pF @ 25V 61nC @ 10V 55V TO-220-3 Full Pack
IRFIZ46NPBF Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1500pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 33A amps.In this device, the drain-source breakdown voltage is 55V and VGS=55V, so the drain-source breakdown voltage is 55V in this case.It is [43 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 20mOhm.A turn-on delay time of 12 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 4V.To operate this transistor, you will need a 55V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IRFIZ46NPBF Features
a continuous drain current (ID) of 33A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 43 ns
single MOSFETs transistor is 20mOhm
a threshold voltage of 4V
a 55V drain to source voltage (Vdss)
IRFIZ46NPBF Applications
There are a lot of Infineon Technologies
IRFIZ46NPBF applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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