IRFIZ46N

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

1500pF @ 25V

Pulsed Drain Current-Max (IDM) :

180A

Number of Elements :

1

Drain-source On Resistance-Max :

0.02Ohm

Surface Mount :

No

JESD-609 Code :

e3

RoHS Status :

Non-RoHS Compliant

Avalanche Energy Rating (Eas) :

230 mJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

33A Tc

Transistor Element Material :

SILICON

Terminal Position :

Single

Qualification Status :

Not Qualified

Case Connection :

Isolated

Published :

1997

Package / Case :

TO-220-3 Full Pack

Packaging :

Tube

Drain Current-Max (Abs) (ID) :

33A

Number of Terminations :

3

Gate Charge (Qg) (Max) @ Vgs :

61nC @ 10V

Series :

HEXFET®

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max :

45W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~175°C TJ

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

55V

Mounting Type :

Through Hole

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

55V

JESD-30 Code :

R-PSFM-T3

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

20m Ω @ 19A, 10V

Additional Feature :

High Reliability

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

4V @ 250µA

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier