IRFIZ34E

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Avalanche Energy Rating (Eas) :

110 mJ

JESD-30 Code :

R-PSFM-T3

FET Type :

N-Channel

Package / Case :

TO-220-3 Full Pack

Published :

1997

Qualification Status :

Not Qualified

Rds On (Max) @ Id, Vgs :

42m Ω @ 11A, 10V

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Through Hole

Vgs (Max) :

±20V

Additional Feature :

High Reliability

Current - Continuous Drain (Id) @ 25°C :

21A Tc

Drain to Source Voltage (Vdss) :

60V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Vgs(th) (Max) @ Id :

4V @ 250µA

Series :

HEXFET®

RoHS Status :

Non-RoHS Compliant

Input Capacitance (Ciss) (Max) @ Vds :

700pF @ 25V

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Temperature :

-55°C~175°C TJ

Case Connection :

Isolated

Peak Reflow Temperature (Cel) :

260

Packaging :

Tube

Drain-source On Resistance-Max :

0.042Ohm

Pulsed Drain Current-Max (IDM) :

100A

Terminal Position :

Single

Time@Peak Reflow Temperature-Max (s) :

40

Gate Charge (Qg) (Max) @ Vgs :

34nC @ 10V

DS Breakdown Voltage-Min :

60V

Drain Current-Max (Abs) (ID) :

21A

Power Dissipation-Max :

37W Tc

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Number of Terminations :

3

Operating Mode :

ENHANCEMENT MODE

Surface Mount :

No