IRFIBE20GPBF

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Mfr.Part #
IRFIBE20GPBF
Manufacturer
Vishay
Package / Case
TO-220-3 Full Pack, Isolated Tab
Datasheet
Download
Description
MOSFET N-CH 800V 1.4A TO220-3
Stock
8,002
In Stock :
8,002

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Packaging :
Tube
Turn On Delay Time :
8.2 ns
Vgs(th) (Max) @ Id :
4V @ 250µA
Number of Pins :
3
Rise Time :
17ns
Supplier Device Package :
TO-220-3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Current - Continuous Drain (Id) @ 25°C :
1.4A Tc
Rds On (Max) @ Id, Vgs :
6.5Ohm @ 840mA, 10V
Voltage - Rated DC :
800V
Height :
9.8mm
Vgs (Max) :
±20V
Operating Temperature :
-55°C~150°C TJ
Gate to Source Voltage (Vgs) :
20V
RoHS Status :
ROHS3 Compliant
Current Rating :
1.4A
Power Dissipation :
30W
Continuous Drain Current (ID) :
1.4A
Max Operating Temperature :
150°C
Radiation Hardening :
No
Published :
2014
Resistance :
6.5Ohm
Width :
4.83mm
Weight :
6.000006g
Threshold Voltage :
4V
Input Capacitance (Ciss) (Max) @ Vds :
530pF @ 25V
Drain to Source Breakdown Voltage :
800V
Drain to Source Resistance :
6.5Ohm
Element Configuration :
Single
Fall Time (Typ) :
27 ns
Factory Lead Time :
8 Weeks
Length :
10.63mm
Number of Elements :
1
Power Dissipation-Max :
30W Tc
Mount :
Through Hole
Lead Free :
Lead Free
REACH SVHC :
Unknown
Number of Channels :
1
Turn-Off Delay Time :
58 ns
Mounting Type :
Through Hole
Drive Voltage (Max Rds On,Min Rds On) :
10V
Min Operating Temperature :
-55°C
Rds On Max :
6.5 Ω
Drain to Source Voltage (Vdss) :
800V
Input Capacitance :
530pF
Package / Case :
TO-220-3 Full Pack, Isolated Tab
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
38nC @ 10V
Datasheets
IRFIBE20GPBF
Introducing Transistors - FETs, MOSFETs - Single Vishay IRFIBE20GPBF from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Number of Channels:1, Mounting Type:Through Hole, Package / Case:TO-220-3 Full Pack, Isolated Tab, IRFIBE20GPBF pinout, IRFIBE20GPBF datasheet PDF, IRFIBE20GPBF amp .Beyond Transistors - FETs, MOSFETs - Single Vishay IRFIBE20GPBF ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay IRFIBE20GPBF


N-Channel Tube 6.5Ohm @ 840mA, 10V ±20V 530pF @ 25V 38nC @ 10V 800V TO-220-3 Full Pack, Isolated Tab

IRFIBE20GPBF Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 530pF @ 25V.This device conducts a continuous drain current (ID) of 1.4A, which is the maximum continuous current transistor can conduct.Using VGS=800V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 800V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 58 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 6.5Ohm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 8.2 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has 4V threshold voltage.This transistor requires a drain-source voltage (Vdss) of 800V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IRFIBE20GPBF Features


a continuous drain current (ID) of 1.4A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 58 ns
single MOSFETs transistor is 6.5Ohm
a threshold voltage of 4V
a 800V drain to source voltage (Vdss)


IRFIBE20GPBF Applications


There are a lot of Vishay Siliconix
IRFIBE20GPBF applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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