IRFIB8N50KPBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

3

Terminal Finish :

Matte Tin (Sn)

Mount :

Through Hole

Number of Terminations :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation-Max :

45W Tc

Drain to Source Voltage (Vdss) :

500V

Length :

10.63mm

Fall Time (Typ) :

8.4 ns

Threshold Voltage :

5V

Continuous Drain Current (ID) :

6.7A

JEDEC-95 Code :

TO-220AB

Operating Temperature :

-55°C~150°C TJ

Turn On Delay Time :

17 ns

Peak Reflow Temperature (Cel) :

260

Transistor Element Material :

SILICON

Mounting Type :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

2160pF @ 25V

Gate to Source Voltage (Vgs) :

30V

Published :

2004

Number of Channels :

1

Rds On (Max) @ Id, Vgs :

350m Ω @ 4A, 10V

Qualification Status :

Not Qualified

Pin Count :

3

Transistor Application :

SWITCHING

Avalanche Energy Rating (Eas) :

290 mJ

Vgs(th) (Max) @ Id :

5V @ 250μA

FET Type :

N-Channel

Rise Time :

16ns

Height :

9.8mm

Pulsed Drain Current-Max (IDM) :

27A

DS Breakdown Voltage-Min :

500V

Number of Elements :

1

Vgs (Max) :

±30V

Package / Case :

TO-220-3 Full Pack, Isolated Tab

Time@Peak Reflow Temperature-Max (s) :

40

Width :

4.83mm

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Weight :

6.000006g

Gate Charge (Qg) (Max) @ Vgs :

89nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Packaging :

Tube

JESD-609 Code :

e3

Turn-Off Delay Time :

28 ns

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

6.7A Tc

REACH SVHC :

Unknown