IRFIB7N50APBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Through Hole

Threshold Voltage :

4V

Power Dissipation :

60W

Package / Case :

TO-220-3 Full Pack, Isolated Tab

Resistance :

520mOhm

Number of Pins :

3

Weight :

6.000006g

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

4V @ 250µA

Drain to Source Breakdown Voltage :

500V

Input Capacitance (Ciss) (Max) @ Vds :

1423pF @ 25V

Number of Elements :

1

Mounting Type :

Through Hole

Height :

9.8mm

Input Capacitance :

1.423nF

Drain to Source Voltage (Vdss) :

500V

Rds On Max :

520 mΩ

Rise Time :

35ns

Turn On Delay Time :

14 ns

Fall Time (Typ) :

28 ns

Rds On (Max) @ Id, Vgs :

520mOhm @ 4A, 10V

Packaging :

Tube

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±30V

Gate Charge (Qg) (Max) @ Vgs :

52nC @ 10V

Max Operating Temperature :

150°C

Factory Lead Time :

8 Weeks

Turn-Off Delay Time :

32 ns

Length :

10.63mm

Min Operating Temperature :

-55°C

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Width :

4.83mm

Gate to Source Voltage (Vgs) :

30V

Published :

2008

FET Type :

N-Channel

Voltage - Rated DC :

500V

Supplier Device Package :

TO-220-3

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

60W Tc

REACH SVHC :

Unknown

Number of Channels :

1

Continuous Drain Current (ID) :

6.6A

Drain to Source Resistance :

520mOhm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current Rating :

6.6A

Element Configuration :

Single

Current - Continuous Drain (Id) @ 25°C :

6.6A Tc