IRFIB5N65A

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

Drain to Source Voltage (Vdss) :

650V

Input Capacitance (Ciss) (Max) @ Vds :

1417pF @ 25V

Published :

2016

Drive Voltage (Max Rds On,Min Rds On) :

10V

Min Operating Temperature :

-55°C

Voltage - Rated DC :

650V

Supplier Device Package :

TO-220-3

Turn-Off Delay Time :

34 ns

Rds On Max :

930 mΩ

Rds On (Max) @ Id, Vgs :

930mOhm @ 3.1A, 10V

Turn On Delay Time :

14 ns

Power Dissipation :

60W

Packaging :

Tube

Package / Case :

TO-220-3 Full Pack, Isolated Tab

FET Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Length :

10.63mm

Width :

4.83mm

Height :

9.8mm

Rise Time :

20ns

Drain to Source Resistance :

930mOhm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

Non-RoHS Compliant

Current Rating :

5.1A

Gate to Source Voltage (Vgs) :

30V

Current - Continuous Drain (Id) @ 25°C :

5.1A Tc

Number of Elements :

1

Mount :

Through Hole

Number of Pins :

3

Power Dissipation-Max :

60W Tc

Lead Free :

Contains Lead

Element Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

48nC @ 10V

Weight :

6.000006g

Number of Channels :

1

Input Capacitance :

1.417nF

Mounting Type :

Through Hole

Max Operating Temperature :

150°C

Fall Time (Typ) :

18 ns

Continuous Drain Current (ID) :

5.1A

Vgs (Max) :

±30V

Vgs(th) (Max) @ Id :

4V @ 250µA