IRFIB5N50LPBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

500V

Package / Case :

TO-220-3 Full Pack, Isolated Tab

Published :

2009

Vgs(th) (Max) @ Id :

5V @ 250μA

Rise Time :

17ns

Transistor Application :

SWITCHING

Vgs (Max) :

±30V

Current - Continuous Drain (Id) @ 25°C :

4.7A Tc

JEDEC-95 Code :

TO-220AB

Gate to Source Voltage (Vgs) :

30V

Number of Elements :

1

Number of Pins :

3

Mounting Type :

Through Hole

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.8Ohm

Packaging :

Tube

Weight :

6.000006g

FET Type :

N-Channel

Number of Terminations :

3

Turn On Delay Time :

13 ns

Rds On (Max) @ Id, Vgs :

800m Ω @ 2.4A, 10V

Height :

9.8mm

Power Dissipation-Max :

42W Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Element Configuration :

Single

Number of Channels :

1

Mount :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

45nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

1000pF @ 25V

Qualification Status :

Not Qualified

Continuous Drain Current (ID) :

4.7A

Length :

10.63mm

Threshold Voltage :

5V

RoHS Status :

ROHS3 Compliant

Pin Count :

3

Width :

4.83mm

Fall Time (Typ) :

10 ns

REACH SVHC :

Unknown

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

26 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)