IRFIB41N15DPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

40

Case Connection :

Isolated

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

260

Radiation Hardening :

No

Avalanche Energy Rating (Eas) :

470 mJ

Continuous Drain Current (ID) :

41A

Mounting Type :

Through Hole

JESD-609 Code :

e3

Height :

16.12mm

Width :

4.826mm

Threshold Voltage :

5.5V

Number of Terminations :

3

JEDEC-95 Code :

TO-220AB

Number of Pins :

3

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Factory Lead Time :

14 Weeks

Rds On (Max) @ Id, Vgs :

45m Ω @ 25A, 10V

Dual Supply Voltage :

150V

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Nominal Vgs :

5.5 V

Fall Time (Typ) :

14 ns

Voltage - Rated DC :

150V

Lead Free :

Lead Free

Element Configuration :

Single

Drain to Source Breakdown Voltage :

150V

Turn On Delay Time :

16 ns

Published :

2003

Packaging :

Tube

REACH SVHC :

No SVHC

Additional Feature :

AVALANCHE RATED

Vgs (Max) :

±20V

Gate to Source Voltage (Vgs) :

30V

Operating Mode :

ENHANCEMENT MODE

Series :

HEXFET®

Power Dissipation :

200W

ECCN Code :

EAR99

Power Dissipation-Max :

48W Tc

Length :

10.6172mm

Vgs(th) (Max) @ Id :

5.5V @ 250µA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Mount :

Through Hole

Turn-Off Delay Time :

25 ns

Current - Continuous Drain (Id) @ 25°C :

41A Tc

Rise Time :

63ns

Input Capacitance (Ciss) (Max) @ Vds :

2520pF @ 25V

Drain-source On Resistance-Max :

0.045Ohm

Operating Temperature :

-55°C~175°C TJ

Transistor Element Material :

SILICON

Package / Case :

TO-220-3 Full Pack

Current Rating :

41A