IRFI9634GPBF
- Mfr.Part #
- IRFI9634GPBF
- Manufacturer
- Vishay
- Package / Case
- TO-220-3 Full Pack, Isolated Tab
- Datasheet
- Download
- Description
- MOSFET P-CH 250V 4.1A TO220-3
- Stock
- 6,961
- In Stock :
- 6,961
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Element Configuration :
- Single
- Radiation Hardening :
- No
- Min Operating Temperature :
- -55°C
- Published :
- 2014
- Continuous Drain Current (ID) :
- 4.1A
- Lead Free :
- Lead Free
- Number of Channels :
- 1
- RoHS Status :
- ROHS3 Compliant
- Fall Time (Typ) :
- 21 ns
- Supplier Device Package :
- TO-220-3
- Rds On Max :
- 1 Ω
- Mounting Type :
- Through Hole
- REACH SVHC :
- Unknown
- Power Dissipation :
- 35W
- Number of Elements :
- 1
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Width :
- 4.83mm
- Gate to Source Voltage (Vgs) :
- 20V
- Resistance :
- 1Ohm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Operating Temperature :
- 150°C
- Vgs (Max) :
- ±20V
- Rds On (Max) @ Id, Vgs :
- 1Ohm @ 2.5A, 10V
- FET Type :
- P-Channel
- Weight :
- 6.000006g
- Threshold Voltage :
- -4V
- Nominal Vgs :
- -4 V
- Turn On Delay Time :
- 12 ns
- Operating Temperature :
- -55°C~150°C TJ
- Turn-Off Delay Time :
- 34 ns
- Number of Pins :
- 3
- Drain to Source Breakdown Voltage :
- -250V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Length :
- 10.63mm
- Rise Time :
- 23ns
- Factory Lead Time :
- 8 Weeks
- Current - Continuous Drain (Id) @ 25°C :
- 4.1A Tc
- Drain to Source Voltage (Vdss) :
- 250V
- Mount :
- Through Hole
- Input Capacitance :
- 680pF
- Packaging :
- Tube
- Drain to Source Resistance :
- 1Ohm
- Package / Case :
- TO-220-3 Full Pack, Isolated Tab
- Height :
- 9.8mm
- Power Dissipation-Max :
- 35W Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 680pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs :
- 38nC @ 10V
- Datasheets
- IRFI9634GPBF

P-Channel Tube 1Ohm @ 2.5A, 10V ±20V 680pF @ 25V 38nC @ 10V 250V TO-220-3 Full Pack, Isolated Tab
IRFI9634GPBF Overview
A device's maximal input capacitance is 680pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 4.1A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is -250V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 34 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 1Ohm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 12 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a -4V threshold voltage.This transistor requires a 250V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IRFI9634GPBF Features
a continuous drain current (ID) of 4.1A
a drain-to-source breakdown voltage of -250V voltage
the turn-off delay time is 34 ns
single MOSFETs transistor is 1Ohm
a threshold voltage of -4V
a 250V drain to source voltage (Vdss)
IRFI9634GPBF Applications
There are a lot of Vishay Siliconix
IRFI9634GPBF applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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