IRFI820GPBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

2.1A Tc

Element Configuration :

Single

Mount :

Through Hole

Isolation Voltage :

2kV

Terminal Finish :

MATTE TIN

Factory Lead Time :

8 Weeks

Lead Free :

Lead Free

Weight :

6.000006g

Threshold Voltage :

4V

Power Dissipation-Max :

30W Tc

Vgs(th) (Max) @ Id :

4V @ 250µA

Pulsed Drain Current-Max (IDM) :

8.4A

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

3

Number of Elements :

1

Pin Count :

3

REACH SVHC :

Unknown

Number of Channels :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

500V

Transistor Element Material :

SILICON

Number of Terminations :

3

JEDEC-95 Code :

TO-220AB

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

3 Ω @ 1.3A, 10V

Resistance :

3Ohm

Published :

2004

Recovery Time :

520 ns

Power Dissipation :

30W

Height :

9.8mm

Vgs (Max) :

±20V

Gate to Source Voltage (Vgs) :

20V

Mounting Type :

Through Hole

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

16 ns

Pbfree Code :

yes

Continuous Drain Current (ID) :

2.1A

Package / Case :

TO-220-3 Full Pack, Isolated Tab

Width :

4.83mm

Turn On Delay Time :

8 ns

Input Capacitance (Ciss) (Max) @ Vds :

360pF @ 25V

Packaging :

Tube

Turn-Off Delay Time :

33 ns

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

40

Radiation Hardening :

No

Rise Time :

8.6ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Peak Reflow Temperature (Cel) :

260

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

24nC @ 10V

Length :

10.63mm