IRFI744GPBF

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Mfr.Part #
IRFI744GPBF
Manufacturer
Vishay
Package / Case
TO-220-3 Full Pack, Isolated Tab
Datasheet
Download
Description
MOSFET N-CH 450V 4.9A TO220-3
Stock
17,014
In Stock :
17,014

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
RoHS Status :
ROHS3 Compliant
Continuous Drain Current (ID) :
4.9A
Gate Charge (Qg) (Max) @ Vgs :
80nC @ 10V
Width :
4.83mm
Min Operating Temperature :
-55°C
Gate to Source Voltage (Vgs) :
20V
Element Configuration :
Single
Input Capacitance (Ciss) (Max) @ Vds :
1400pF @ 25V
Max Operating Temperature :
150°C
Drain to Source Voltage (Vdss) :
450V
FET Type :
N-Channel
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Threshold Voltage :
4V
Rise Time :
28ns
Length :
10.63mm
Power Dissipation-Max :
40W Tc
REACH SVHC :
Unknown
Current - Continuous Drain (Id) @ 25°C :
4.9A Tc
Mount :
Through Hole
Rds On Max :
630 mΩ
Height :
9.8mm
Packaging :
Tube
Rds On (Max) @ Id, Vgs :
630mOhm @ 2.9A, 10V
Number of Pins :
3
Input Capacitance :
1.4nF
Package / Case :
TO-220-3 Full Pack, Isolated Tab
Weight :
6.000006g
Supplier Device Package :
TO-220-3
Vgs (Max) :
±20V
Turn On Delay Time :
8.7 ns
Drain to Source Resistance :
630mOhm
Turn-Off Delay Time :
58 ns
Operating Temperature :
-55°C~150°C TJ
Published :
1997
Vgs(th) (Max) @ Id :
4V @ 250µA
Mounting Type :
Through Hole
Drive Voltage (Max Rds On,Min Rds On) :
10V
Number of Channels :
1
Fall Time (Typ) :
27 ns
Datasheets
IRFI744GPBF
Introducing Transistors - FETs, MOSFETs - Single Vishay IRFI744GPBF from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Package / Case:TO-220-3 Full Pack, Isolated Tab, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Number of Channels:1, IRFI744GPBF pinout, IRFI744GPBF datasheet PDF, IRFI744GPBF amp .Beyond Transistors - FETs, MOSFETs - Single Vishay IRFI744GPBF ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay IRFI744GPBF


N-Channel Tube 630mOhm @ 2.9A, 10V ±20V 1400pF @ 25V 80nC @ 10V 450V TO-220-3 Full Pack, Isolated Tab

IRFI744GPBF Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1400pF @ 25V.This device conducts a continuous drain current (ID) of 4.9A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 58 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 630mOhm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 8.7 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has 4V threshold voltage.This transistor requires a drain-source voltage (Vdss) of 450V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IRFI744GPBF Features


a continuous drain current (ID) of 4.9A
the turn-off delay time is 58 ns
single MOSFETs transistor is 630mOhm
a threshold voltage of 4V
a 450V drain to source voltage (Vdss)


IRFI744GPBF Applications


There are a lot of Vishay Siliconix
IRFI744GPBF applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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