IRFI7440GPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-30 Code :

R-PSFM-T3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

95A Tc

DS Breakdown Voltage-Min :

40V

Operating Temperature :

-55°C~175°C TJ

Factory Lead Time :

12 Weeks

Continuous Drain Current (ID) :

95A

Published :

2008

Terminal Position :

Single

Drain to Source Voltage (Vdss) :

40V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

132nC @ 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mounting Type :

Through Hole

Transistor Application :

SWITCHING

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

380A

Package / Case :

TO-220-3 Full Pack

Drain-source On Resistance-Max :

0.0025Ohm

Case Connection :

Isolated

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

3.9V @ 100µA

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

4549pF @ 25V

JEDEC-95 Code :

TO-220AB

Avalanche Energy Rating (Eas) :

407 mJ

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

2.5m Ω @ 57A, 10V

FET Type :

N-Channel

Number of Terminations :

3

Mount :

Through Hole

Series :

HEXFET®, StrongIRFET™

Power Dissipation-Max :

42W Tc

Packaging :

Tube

Drive Voltage (Max Rds On,Min Rds On) :

10V

ECCN Code :

EAR99