IRFI644GPBF

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Mfr.Part #
IRFI644GPBF
Manufacturer
Vishay
Package / Case
TO-220-3 Full Pack, Isolated Tab
Datasheet
Download
Description
MOSFET N-CH 250V 7.9A TO220-3
Stock
7,010
In Stock :
7,010

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Radiation Hardening :
No
Drive Voltage (Max Rds On,Min Rds On) :
10V
Weight :
6.000006g
Rise Time :
24ns
Mount :
Through Hole
Element Configuration :
Single
Gate to Source Voltage (Vgs) :
20V
Vgs (Max) :
±20V
Number of Pins :
3
Input Capacitance (Ciss) (Max) @ Vds :
1300pF @ 25V
Continuous Drain Current (ID) :
7.9A
Min Operating Temperature :
-55°C
Number of Elements :
1
Input Capacitance :
1.3nF
Voltage - Rated DC :
250V
Packaging :
Tube
Package / Case :
TO-220-3 Full Pack, Isolated Tab
Drain to Source Breakdown Voltage :
250V
Turn-Off Delay Time :
53 ns
Nominal Vgs :
4 V
Mounting Type :
Through Hole
Number of Channels :
1
Supplier Device Package :
TO-220-3
RoHS Status :
ROHS3 Compliant
Published :
2014
Drain to Source Resistance :
280mOhm
Fall Time (Typ) :
24 ns
Lead Free :
Lead Free
Width :
4.83mm
Current - Continuous Drain (Id) @ 25°C :
7.9A Tc
Length :
10.63mm
Rds On (Max) @ Id, Vgs :
280mOhm @ 4.7A, 10V
Gate Charge (Qg) (Max) @ Vgs :
68nC @ 10V
Rds On Max :
280 mΩ
Operating Temperature :
-55°C~150°C TJ
Resistance :
280mOhm
Vgs(th) (Max) @ Id :
4V @ 250µA
Threshold Voltage :
4V
Turn On Delay Time :
11 ns
REACH SVHC :
Unknown
Power Dissipation :
40W
Current Rating :
7.9A
Max Operating Temperature :
150°C
FET Type :
N-Channel
Recovery Time :
500 ns
Power Dissipation-Max :
40W Tc
Factory Lead Time :
8 Weeks
Height :
9.8mm
Drain to Source Voltage (Vdss) :
250V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Datasheets
IRFI644GPBF
Introducing Transistors - FETs, MOSFETs - Single Vishay IRFI644GPBF from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Package / Case:TO-220-3 Full Pack, Isolated Tab, Mounting Type:Through Hole, Number of Channels:1, Operating Temperature:-55°C~150°C TJ, IRFI644GPBF pinout, IRFI644GPBF datasheet PDF, IRFI644GPBF amp .Beyond Transistors - FETs, MOSFETs - Single Vishay IRFI644GPBF ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay IRFI644GPBF


N-Channel Tube 280mOhm @ 4.7A, 10V ±20V 1300pF @ 25V 68nC @ 10V 250V TO-220-3 Full Pack, Isolated Tab

IRFI644GPBF Overview


The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1300pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 7.9A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=250V. And this device has 250V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 53 ns. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 280mOhm. Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 11 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 4V threshold voltage. Operating this transistor requires a 250V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IRFI644GPBF Features


a continuous drain current (ID) of 7.9A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 53 ns
single MOSFETs transistor is 280mOhm
a threshold voltage of 4V
a 250V drain to source voltage (Vdss)


IRFI644GPBF Applications


There are a lot of Vishay Siliconix
IRFI644GPBF applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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