IRFI640G

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On Max :

180 mΩ

Weight :

6.000006g

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

180mOhm @ 5.9A, 10V

Fall Time (Typ) :

36 ns

Radiation Hardening :

No

Drain to Source Resistance :

180mOhm

Number of Channels :

1

Supplier Device Package :

TO-220-3

Packaging :

Tube

Rise Time :

51ns

Turn-Off Delay Time :

45 ns

Gate to Source Voltage (Vgs) :

20V

Mount :

Through Hole

Package / Case :

TO-220-3 Full Pack, Isolated Tab

Max Operating Temperature :

150°C

Operating Temperature :

-55°C~150°C TJ

Width :

4.83mm

Element Configuration :

Single

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Voltage (Vdss) :

200V

Power Dissipation :

40W

Continuous Drain Current (ID) :

9.8A

Drain to Source Breakdown Voltage :

200V

Current - Continuous Drain (Id) @ 25°C :

9.8A Tc

Turn On Delay Time :

14 ns

Lead Free :

Contains Lead

Input Capacitance :

1.3nF

Input Capacitance (Ciss) (Max) @ Vds :

1300pF @ 25V

Height :

9.8mm

Power Dissipation-Max :

40W Tc

Published :

1997

Voltage - Rated DC :

200V

Number of Pins :

3

Mounting Type :

Through Hole

Length :

10.63mm

FET Type :

N-Channel

Min Operating Temperature :

-55°C

Vgs(th) (Max) @ Id :

4V @ 250µA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

Non-RoHS Compliant

Current Rating :

9.8A

Gate Charge (Qg) (Max) @ Vgs :

70nC @ 10V