IRFI620GPBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

260pF @ 25V

Radiation Hardening :

No

Terminal Finish :

MATTE TIN

FET Type :

N-Channel

Transistor Application :

SWITCHING

Published :

2004

Power Dissipation :

30W

Gate to Source Voltage (Vgs) :

20V

Pin Count :

3

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tube

Current Rating :

4.1A

Weight :

6.000006g

Package / Case :

TO-220-3 Full Pack, Isolated Tab

Pbfree Code :

yes

Length :

10.63mm

Vgs (Max) :

±20V

Lead Free :

Lead Free

Mount :

Through Hole

Isolation Voltage :

2.5kV

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Temperature :

-55°C~150°C TJ

Height :

9.8mm

Current - Continuous Drain (Id) @ 25°C :

4.1A Tc

Number of Channels :

1

ECCN Code :

EAR99

Number of Elements :

1

Vgs(th) (Max) @ Id :

4V @ 250µA

Turn On Delay Time :

7.2 ns

Resistance :

800mOhm

Threshold Voltage :

4V

Voltage - Rated DC :

200V

Factory Lead Time :

8 Weeks

Power Dissipation-Max :

30W Tc

Drain to Source Breakdown Voltage :

200V

Mounting Type :

Through Hole

Turn-Off Delay Time :

19 ns

Continuous Drain Current (ID) :

4.1A

RoHS Status :

ROHS3 Compliant

Recovery Time :

300 ns

Nominal Vgs :

4 V

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 10V

Number of Pins :

3

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

800m Ω @ 2.5A, 10V

Rise Time :

22ns

JEDEC-95 Code :

TO-220AB

REACH SVHC :

No SVHC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

4.83mm

Fall Time (Typ) :

13 ns

Element Configuration :

Single

Number of Terminations :

3

JESD-609 Code :

e3

Dual Supply Voltage :

200V