IRFI614GPBF
- Mfr.Part #
- IRFI614GPBF
- Manufacturer
- Vishay
- Package / Case
- TO-220-3 Full Pack, Isolated Tab
- Datasheet
- Download
- Description
- MOSFET N-CH 250V 2.1A TO220-3
- Stock
- 8,022
- In Stock :
- 8,022
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Resistance :
- 2kOhm
- Radiation Hardening :
- No
- Fall Time (Typ) :
- 7 ns
- Current - Continuous Drain (Id) @ 25°C :
- 2.1A Tc
- Drain to Source Voltage (Vdss) :
- 250V
- Turn-Off Delay Time :
- 16 ns
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Contains Lead
- Packaging :
- Tube
- Rise Time :
- 7.6ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Operating Temperature :
- 150°C
- Mounting Type :
- Through Hole
- Gate to Source Voltage (Vgs) :
- 20V
- Weight :
- 6.000006g
- Power Dissipation-Max :
- 23W Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 140pF @ 25V
- Operating Temperature :
- -55°C~150°C TJ
- Number of Pins :
- 3
- Nominal Vgs :
- 4 V
- Supplier Device Package :
- TO-220-3
- Number of Channels :
- 1
- Min Operating Temperature :
- -55°C
- Rds On Max :
- 2 Ω
- Input Capacitance :
- 140pF
- Continuous Drain Current (ID) :
- 2.1A
- FET Type :
- N-Channel
- Vgs (Max) :
- ±20V
- Height :
- 9.8mm
- Element Configuration :
- Single
- Turn On Delay Time :
- 7 ns
- Published :
- 2016
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Dual Supply Voltage :
- 250V
- Drain to Source Resistance :
- 2Ohm
- Gate Charge (Qg) (Max) @ Vgs :
- 8.2nC @ 10V
- Rds On (Max) @ Id, Vgs :
- 2Ohm @ 1.3A, 10V
- Mount :
- Through Hole
- REACH SVHC :
- No SVHC
- Threshold Voltage :
- 4V
- Factory Lead Time :
- 8 Weeks
- Length :
- 10.63mm
- Package / Case :
- TO-220-3 Full Pack, Isolated Tab
- Width :
- 4.83mm
- Datasheets
- IRFI614GPBF

N-Channel Tube 2Ohm @ 1.3A, 10V ±20V 140pF @ 25V 8.2nC @ 10V 250V TO-220-3 Full Pack, Isolated Tab
IRFI614GPBF Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 140pF @ 25V.This device conducts a continuous drain current (ID) of 2.1A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 16 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 2Ohm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 7 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has 4V threshold voltage.This transistor requires a drain-source voltage (Vdss) of 250V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IRFI614GPBF Features
a continuous drain current (ID) of 2.1A
the turn-off delay time is 16 ns
single MOSFETs transistor is 2Ohm
a threshold voltage of 4V
a 250V drain to source voltage (Vdss)
IRFI614GPBF Applications
There are a lot of Vishay Siliconix
IRFI614GPBF applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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