IRFI540NPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

4V @ 250µA

Threshold Voltage :

4V

JEDEC-95 Code :

TO-220AB

Gate to Source Voltage (Vgs) :

20V

Dual Supply Voltage :

100V

Number of Elements :

1

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Height :

9.8mm

Current - Continuous Drain (Id) @ 25°C :

20A Tc

Drain to Source Breakdown Voltage :

100V

Rise Time :

39ns

Case Connection :

Isolated

Width :

4.826mm

Nominal Vgs :

4 V

Operating Temperature :

-55°C~175°C TJ

Length :

10.6172mm

Packaging :

Tube

Fall Time (Typ) :

33 ns

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

52m Ω @ 11A, 10V

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Termination :

Through Hole

Current Rating :

20A

Gate Charge (Qg) (Max) @ Vgs :

94nC @ 10V

Published :

1998

FET Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

40

Isolation Voltage :

2.5kV

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Voltage - Rated DC :

100V

Turn-Off Delay Time :

44 ns

Drain-source On Resistance-Max :

0.052Ohm

REACH SVHC :

No SVHC

Mounting Type :

Through Hole

Number of Terminations :

3

Number of Pins :

3

Series :

HEXFET®

Peak Reflow Temperature (Cel) :

260

Package / Case :

TO-220-3 Full Pack

Element Configuration :

Single

Power Dissipation-Max :

54W Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Factory Lead Time :

12 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

1400pF @ 25V

Turn On Delay Time :

8.2 ns

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

20A

Radiation Hardening :

No

Recovery Time :

250 ns

Power Dissipation :

42W

Mount :

Through Hole