IRFI520N

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Operating Mode :

ENHANCEMENT MODE

Case Connection :

Isolated

Terminal Position :

Single

Published :

1998

Package / Case :

TO-220-3 Full Pack

Qualification Status :

Not Qualified

Number of Terminations :

3

JESD-30 Code :

R-PSFM-T3

Vgs(th) (Max) @ Id :

4V @ 250µA

Configuration :

Single

Power Dissipation-Max :

30W Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

Non-RoHS Compliant

FET Type :

N-Channel

Surface Mount :

No

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~175°C TJ

Number of Elements :

1

Drain to Source Voltage (Vdss) :

100V

JESD-609 Code :

e3

Packaging :

Tube

Drain-source On Resistance-Max :

0.2Ohm

Drain Current-Max (Abs) (ID) :

7.2A

Series :

HEXFET®

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

330pF @ 25V

Mounting Type :

Through Hole

Rds On (Max) @ Id, Vgs :

200m Ω @ 4.3A, 10V

Current - Continuous Drain (Id) @ 25°C :

7.6A Tc

DS Breakdown Voltage-Min :

100V

JEDEC-95 Code :

TO-220AB

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Vgs (Max) :

±20V