IRFI520G
- Mfr.Part #
- IRFI520G
- Manufacturer
- Vishay
- Package / Case
- TO-220-3 Full Pack, Isolated Tab
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 7.2A TO220-3
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Max Operating Temperature :
- 175°C
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation-Max :
- 37W Tc
- Turn On Delay Time :
- 8.8 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 16nC @ 10V
- Rds On (Max) @ Id, Vgs :
- 270mOhm @ 4.3A, 10V
- Min Operating Temperature :
- -55°C
- Input Capacitance (Ciss) (Max) @ Vds :
- 360pF @ 25V
- Drain to Source Voltage (Vdss) :
- 100V
- Width :
- 4.83mm
- Supplier Device Package :
- TO-220-3
- Published :
- 2016
- Weight :
- 6.000006g
- Rise Time :
- 30ns
- Vgs (Max) :
- ±20V
- RoHS Status :
- Non-RoHS Compliant
- Length :
- 10.63mm
- FET Type :
- N-Channel
- Drain to Source Resistance :
- 270mOhm
- Number of Pins :
- 3
- Current - Continuous Drain (Id) @ 25°C :
- 7.2A Tc
- Continuous Drain Current (ID) :
- 7.2A
- Package / Case :
- TO-220-3 Full Pack, Isolated Tab
- Input Capacitance :
- 360pF
- Fall Time (Typ) :
- 20 ns
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Element Configuration :
- Single
- Gate to Source Voltage (Vgs) :
- 20V
- Packaging :
- Tube
- Number of Channels :
- 1
- Mounting Type :
- Through Hole
- Operating Temperature :
- -55°C~175°C TJ
- Turn-Off Delay Time :
- 19 ns
- Rds On Max :
- 270 mΩ
- Mount :
- Through Hole
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Radiation Hardening :
- No
- Height :
- 9.8mm
- Datasheets
- IRFI520G

N-Channel Tube 270mOhm @ 4.3A, 10V ±20V 360pF @ 25V 16nC @ 10V 100V TO-220-3 Full Pack, Isolated Tab
IRFI520G Overview
The maximum input capacitance of this device is 360pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 7.2A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 19 ns.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 270mOhm.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 8.8 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 100V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IRFI520G Features
a continuous drain current (ID) of 7.2A
the turn-off delay time is 19 ns
single MOSFETs transistor is 270mOhm
a 100V drain to source voltage (Vdss)
IRFI520G Applications
There are a lot of Vishay Siliconix
IRFI520G applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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