IRFI4510GPBF
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- Mfr.Part #
- IRFI4510GPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N CH 100V 35A TO220
- Stock
- 8,198
- In Stock ：
- 8,198
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Package / Case :
- TO-220-3 Full Pack
- Series :
- HEXFET®
- Published :
- 2008
- Factory Lead Time :
- 15 Weeks
- Power Dissipation-Max :
- 42W Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Terminations :
- 3
- Turn-Off Delay Time :
- 54 ns
- Fall Time (Typ) :
- 37 ns
- Rds On (Max) @ Id, Vgs :
- 13.5m Ω @ 21A, 10V
- RoHS Status :
- ROHS3 Compliant
- Weight :
- 6.000006g
- Transistor Application :
- SWITCHING
- Avalanche Energy Rating (Eas) :
- 206 mJ
- Threshold Voltage :
- 2V
- Current - Continuous Drain (Id) @ 25°C :
- 35A Tc
- Transistor Element Material :
- SILICON
- Mount :
- Through Hole
- Operating Mode :
- ENHANCEMENT MODE
- Continuous Drain Current (ID) :
- 35A
- Input Capacitance (Ciss) (Max) @ Vds :
- 2998pF @ 50V
- Drain to Source Breakdown Voltage :
- 100V
- ECCN Code :
- EAR99
- Number of Pins :
- 3
- Operating Temperature :
- -55°C~175°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JEDEC-95 Code :
- TO-220AB
- Number of Elements :
- 1
- Vgs (Max) :
- ±20V
- Radiation Hardening :
- No
- Mounting Type :
- Through Hole
- REACH SVHC :
- No SVHC
- Lead Free :
- Lead Free
- FET Type :
- N-Channel
- Case Connection :
- Isolated
- Gate Charge (Qg) (Max) @ Vgs :
- 81nC @ 10V
- Terminal Position :
- Single
- Vgs(th) (Max) @ Id :
- 4V @ 100µA
- Rise Time :
- 33ns
- Packaging :
- Tube
- Gate to Source Voltage (Vgs) :
- 20V
- Turn On Delay Time :
- 16 ns
- Power Dissipation :
- 42W
- Datasheets
- IRFI4510GPBF
N-Channel Tube 13.5m Ω @ 21A, 10V ±20V 2998pF @ 50V 81nC @ 10V TO-220-3 Full Pack
IRFI4510GPBF Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 206 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2998pF @ 50V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 35A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 100V, and this device has a drainage-to-source breakdown voltage of 100VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 54 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 16 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is 2V, which means that it will not activate any of its functions when its threshold voltage reaches 2V.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IRFI4510GPBF Features
the avalanche energy rating (Eas) is 206 mJ
a continuous drain current (ID) of 35A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 54 ns
a threshold voltage of 2V
IRFI4510GPBF Applications
There are a lot of Infineon Technologies
IRFI4510GPBF applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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