IRFI4321PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

4440pF @ 50V

Height :

9.8mm

Terminal Finish :

MATTE TIN OVER NICKEL

Fall Time (Typ) :

20 ns

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Gate to Source Voltage (Vgs) :

30V

Lead Free :

Lead Free

Peak Reflow Temperature (Cel) :

260

Power Dissipation-Max :

46W Tc

Element Configuration :

Single

Number of Elements :

1

Threshold Voltage :

5V

Turn On Delay Time :

18 ns

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

34A Tc

Power Dissipation :

46W

Packaging :

Tube

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

12 Weeks

REACH SVHC :

No SVHC

Voltage - Rated DC :

150V

Continuous Drain Current (ID) :

34A

Vgs(th) (Max) @ Id :

5V @ 250μA

Current Rating :

34A

Rise Time :

29ns

Number of Terminations :

3

Radiation Hardening :

No

Transistor Element Material :

SILICON

Published :

2006

Length :

10.6172mm

Rds On (Max) @ Id, Vgs :

16m Ω @ 20A, 10V

JESD-609 Code :

e3

Mount :

Through Hole

Number of Pins :

3

Series :

HEXFET®

Package / Case :

TO-220-3 Full Pack

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±30V

Turn-Off Delay Time :

27 ns

Drain to Source Breakdown Voltage :

150V

Mounting Type :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

JEDEC-95 Code :

TO-220AB

Transistor Application :

SWITCHING

Width :

4.826mm

Time@Peak Reflow Temperature-Max (s) :

40