IRFI4229PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

JEDEC-95 Code :

TO-220AB

Pulsed Drain Current-Max (IDM) :

72A

Drain-source On Resistance-Max :

0.046Ohm

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

250V

Fall Time (Typ) :

13 ns

Length :

10.63mm

Vgs (Max) :

±30V

Package / Case :

TO-220-3

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

46m Ω @ 11A, 10V

Factory Lead Time :

12 Weeks

FET Type :

N-Channel

Continuous Drain Current (ID) :

19A

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

ECCN Code :

EAR99

Number of Pins :

3

Number of Terminations :

3

Time@Peak Reflow Temperature-Max (s) :

40

Height :

9.8mm

Power Dissipation :

46W

Mounting Type :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

4480pF @ 25V

Turn On Delay Time :

18 ns

Published :

2008

Number of Elements :

1

Element Configuration :

Single

Series :

HEXFET®

Turn-Off Delay Time :

32 ns

Current - Continuous Drain (Id) @ 25°C :

19A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tube

Avalanche Energy Rating (Eas) :

110 mJ

Terminal Finish :

MATTE TIN OVER NICKEL

Power Dissipation-Max :

46W Tc

Transistor Application :

SWITCHING

Case Connection :

Isolated

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

5V @ 250μA

Mount :

Through Hole

Peak Reflow Temperature (Cel) :

260

Operating Temperature :

-40°C~150°C TJ

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rise Time :

17ns

Width :

4.83mm

Gate to Source Voltage (Vgs) :

30V