IRFI4228PBF
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- Mfr.Part #
- IRFI4228PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 150V 34A TO220AB FP
- Stock
- 5,105
- In Stock ：
- 5,105
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Resistance :
- 16mOhm
- JEDEC-95 Code :
- TO-220AB
- Power Dissipation-Max :
- 46W Tc
- Length :
- 10.6172mm
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Number of Pins :
- 3
- FET Type :
- N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 34A Tc
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 3
- Gate to Source Voltage (Vgs) :
- 30V
- Transistor Application :
- SWITCHING
- Mounting Type :
- Through Hole
- Case Connection :
- DRAIN
- Mount :
- Through Hole
- Input Capacitance (Ciss) (Max) @ Vds :
- 4560pF @ 25V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -40°C~150°C TJ
- Drain to Source Breakdown Voltage :
- 150V
- Lead Free :
- Lead Free
- Operating Mode :
- ENHANCEMENT MODE
- Series :
- HEXFET®
- Number of Elements :
- 1
- Rds On (Max) @ Id, Vgs :
- 16m Ω @ 20A, 10V
- Factory Lead Time :
- 15 Weeks
- Packaging :
- Tube
- Vgs (Max) :
- ±30V
- Width :
- 4.826mm
- RoHS Status :
- ROHS3 Compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Voltage - Rated DC :
- 150V
- Power Dissipation :
- 46W
- Continuous Drain Current (ID) :
- 34A
- Published :
- 2006
- ECCN Code :
- EAR99
- Height :
- 9.8mm
- Gate Charge (Qg) (Max) @ Vgs :
- 110nC @ 10V
- Element Configuration :
- Single
- Package / Case :
- TO-220-3 Full Pack
- Current Rating :
- 34A
- Datasheets
- IRFI4228PBF
N-Channel Tube 16m Ω @ 20A, 10V ±30V 4560pF @ 25V 110nC @ 10V TO-220-3 Full Pack
IRFI4228PBF Overview
A device's maximum input capacitance is 4560pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 34A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=150V, and this device has a drain-to-source breakdown voltage of 150V voltage.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.This device uses no drive voltage (10V) to reduce its overall power consumption.
IRFI4228PBF Features
a continuous drain current (ID) of 34A
a drain-to-source breakdown voltage of 150V voltage
IRFI4228PBF Applications
There are a lot of Infineon Technologies
IRFI4228PBF applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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