IRFF9222

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Pbfree Code :

No

Transistor Application :

SWITCHING

Number of Elements :

1

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

350 pF @ 25 V

Mounting Type :

Through Hole

Pulsed Drain Current-Max (IDM) :

8 A

Gate Charge (Qg) (Max) @ Vgs :

22 nC @ 10 V

Series :

-

Vgs (Max) :

±20V

Drain-source On Resistance-Max :

2.4 Ω

Manufacturer :

Rochester Electronics LLC

Surface Mount :

No

Operating Temperature :

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs :

2.4Ohm @ 1.5A, 10V

Product Status :

Active

Drain to Source Voltage (Vdss) :

200 V

Terminal Finish :

TIN LEAD

Power Dissipation (Max) :

20W (Tc)

Reach Compliance Code :

Unknown

FET Feature :

-

Terminal Form :

Wire

Package :

Bulk

JESD-30 Code :

O-MBCY-W3

Number of Terminals :

3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drive Voltage (Max Rds On, Min Rds On) :

10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Transistor Element Material :

SILICON

RoHS :

Non-Compliant

Supplier Device Package :

TO-205AF (TO-39)

DS Breakdown Voltage-Min :

200 V

Configuration :

SINGLE WITH BUILT-IN DIODE

Qualification Status :

COMMERCIAL

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Avalanche Energy Rating (Eas) :

290 mJ

Operating Mode :

ENHANCEMENT MODE

JEDEC-95 Code :

TO-205AF

Current - Continuous Drain (Id) @ 25°C :

2A (Ta)

Polarity/Channel Type :

P-Channel

Package / Case :

TO-205AF Metal Can

JESD-609 Code :

e0

FET Type :

P-Channel

Package Shape :

Round

Terminal Position :

BOTTOM