IRFF9122

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Manufacturer :

Rochester Electronics LLC

Configuration :

SINGLE WITH BUILT-IN DIODE

Case Connection :

DRAIN

JESD-30 Code :

O-MBCY-W3

Package / Case :

TO-205AF Metal Can

Drive Voltage (Max Rds On, Min Rds On) :

-

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

BOTTOM

Terminal Form :

Wire

Power Dissipation (Max) :

20W

Qualification Status :

COMMERCIAL

Avalanche Energy Rating (Eas) :

370 mJ

DS Breakdown Voltage-Min :

100 V

FET Feature :

-

JEDEC-95 Code :

TO-205AF

Package Shape :

Round

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Series :

-

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Element Material :

SILICON

Reach Compliance Code :

Unknown

Operating Temperature :

-

Vgs(th) (Max) @ Id :

-

Number of Terminals :

3

Package :

Bulk

Product Status :

Active

Pulsed Drain Current-Max (IDM) :

14 A

Polarity/Channel Type :

P-Channel

Transistor Application :

SWITCHING

Mounting Type :

Through Hole

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

-

Current - Continuous Drain (Id) @ 25°C :

3.5A (Tc)

Pbfree Code :

No

JESD-609 Code :

e0

Drain to Source Voltage (Vdss) :

100 V

Vgs (Max) :

-

Drain-source On Resistance-Max :

0.8 Ω

FET Type :

N-Channel

Supplier Device Package :

TO-205AF (TO-39)

Surface Mount :

No

Terminal Finish :

TIN LEAD