IRFF433

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Product Status :

Active

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-30 Code :

O-MBCY-W3

FET Feature :

-

Terminal Form :

Wire

Terminal Position :

BOTTOM

JESD-609 Code :

e0

Qualification Status :

COMMERCIAL

Case Connection :

DRAIN

Terminal Finish :

TIN LEAD

Vgs(th) (Max) @ Id :

4V @ 250µA

Drain-source On Resistance-Max :

2 Ω

DS Breakdown Voltage-Min :

450 V

Reach Compliance Code :

Unknown

Power Dissipation (Max) :

25W (Tc)

Pbfree Code :

No

Surface Mount :

No

Number of Elements :

1

Series :

-

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

600 pF @ 25 V

Technology :

MOSFET (Metal Oxide)

Package / Case :

TO-205AF Metal Can

Operating Temperature :

-55°C ~ 150°C (TJ)

Supplier Device Package :

TO-205AF (TO-39)

Drain to Source Voltage (Vdss) :

450 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

Number of Terminals :

3

Transistor Application :

SWITCHING

Package Shape :

Round

Package :

Bulk

Gate Charge (Qg) (Max) @ Vgs :

30 nC @ 10 V

Polarity/Channel Type :

N-Channel

JEDEC-95 Code :

TO-205AF

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Pulsed Drain Current-Max (IDM) :

9 A

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

2.25A (Tc)

Mounting Type :

Through Hole

Rds On (Max) @ Id, Vgs :

2Ohm @ 1.5A, 10V

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE