IRFAF50

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - RF

Package :

Bulk

Transistor Application :

SWITCHING

Terminal Finish :

TIN LEAD

Gate Charge (Qg) (Max) @ Vgs :

180 nC @ 10 V

FET Feature :

-

Terminal Position :

BOTTOM

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

1.85 Ω

Vgs (Max) :

±20V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Product Status :

Active

Rds On (Max) @ Id, Vgs :

1.85Ohm @ 6.2A, 10V

Operating Temperature :

-55°C ~ 150°C (TJ)

JESD-609 Code :

e0

Pulsed Drain Current-Max (IDM) :

25 A

Mounting Type :

Through Hole

FET Type :

N-Channel

Package Shape :

Round

Series :

HEXFET®

Number of Elements :

1

DS Breakdown Voltage-Min :

900 V

Number of Terminals :

2

Package / Case :

TO-204AA, TO-3

Technology :

MOSFET (Metal Oxide)

Manufacturer :

Rochester Electronics LLC

Avalanche Energy Rating (Eas) :

870 mJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain to Source Voltage (Vdss) :

900 V

Supplier Device Package :

TO-204AA (TO-3)

Polarity/Channel Type :

N-Channel

JESD-30 Code :

O-MBFM-P2

JEDEC-95 Code :

TO-204AA

Power Dissipation (Max) :

150W (Tc)

Transistor Element Material :

SILICON

Pin Count :

2

Input Capacitance (Ciss) (Max) @ Vds :

2700 pF @ 25 V

Qualification Status :

COMMERCIAL

Vgs(th) (Max) @ Id :

4V @ 250µA

Terminal Form :

PIN/PEG

Pbfree Code :

No

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

6.2A (Tc)

Surface Mount :

No

Reach Compliance Code :

Unknown