IRFAF50

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - RF

Power Dissipation (Max) :

150W (Tc)

Vgs(th) (Max) @ Id :

4V @ 250µA

Drain to Source Voltage (Vdss) :

900 V

Supplier Device Package :

TO-204AA (TO-3)

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

6.2A (Tc)

Rds On (Max) @ Id, Vgs :

1.85Ohm @ 6.2A, 10V

Pbfree Code :

No

Terminal Position :

BOTTOM

Technology :

MOSFET (Metal Oxide)

Package :

Bulk

Mounting Type :

Through Hole

Terminal Finish :

TIN LEAD

Pin Count :

2

Drain-source On Resistance-Max :

1.85 Ω

FET Feature :

-

Manufacturer :

Rochester Electronics LLC

Vgs (Max) :

±20V

Series :

HEXFET®

Configuration :

SINGLE WITH BUILT-IN DIODE

Reach Compliance Code :

Unknown

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Element Material :

SILICON

Number of Elements :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

180 nC @ 10 V

Package Shape :

Round

JESD-609 Code :

e0

Case Connection :

DRAIN

DS Breakdown Voltage-Min :

900 V

FET Type :

N-Channel

Qualification Status :

COMMERCIAL

Input Capacitance (Ciss) (Max) @ Vds :

2700 pF @ 25 V

Operating Temperature :

-55°C ~ 150°C (TJ)

Operating Mode :

ENHANCEMENT MODE

Product Status :

Active

Number of Terminals :

2

JEDEC-95 Code :

TO-204AA

Package / Case :

TO-204AA, TO-3

Surface Mount :

No

Terminal Form :

PIN/PEG

Avalanche Energy Rating (Eas) :

870 mJ

Pulsed Drain Current-Max (IDM) :

25 A

Drive Voltage (Max Rds On, Min Rds On) :

10V

Polarity/Channel Type :

N-Channel

JESD-30 Code :

O-MBFM-P2