IRFAE42
- Mfr.Part #
- IRFAE42
- Manufacturer
- International Rectifier
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- N-CHANNEL HERMETIC MOS HEXFET
- Stock
- 42,738
- In Stock :
- 42,738
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- Manufacturer :
- International Rectifier
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drive Voltage (Max Rds On, Min Rds On) :
- -
- FET Feature :
- -
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Manufacturer :
- International Rectifier
- Drain to Source Voltage (Vdss) :
- 800 V
- Package / Case :
- TO-204AA, TO-3
- Power Dissipation-Max (Abs) :
- 125 W
- Number of Terminals :
- 2
- Configuration :
- Single
- Number of Elements :
- 1
- Series :
- -
- Pulsed Drain Current-Max (IDM) :
- 18 A
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e0
- JEDEC-95 Code :
- TO-204AA
- Operating Temperature :
- -
- Power Dissipation (Max) :
- 125W
- Supplier Device Package :
- TO-204AA (TO-3)
- JESD-30 Code :
- O-MBFM-P2
- Vgs(th) (Max) @ Id :
- -
- DS Breakdown Voltage-Min :
- 800 V
- FET Type :
- N-Channel
- Terminal Position :
- BOTTOM
- Product Status :
- Active
- Operating Mode :
- ENHANCEMENT MODE
- Subcategory :
- FET General Purpose Power
- Reach Compliance Code :
- Unknown
- Package Shape :
- Round
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Vgs (Max) :
- -
- Drain Current-Max (Abs) (ID) :
- 4.4 A
- Package :
- Bulk
- Polarity/Channel Type :
- N-Channel
- Rds On (Max) @ Id, Vgs :
- -
- Current - Continuous Drain (Id) @ 25°C :
- 4.4A
- Qualification Status :
- Not Qualified
- Case Connection :
- DRAIN
- Surface Mount :
- No
- Mounting Type :
- Through Hole
- Terminal Form :
- PIN/PEG
- Drain-source On Resistance-Max :
- 2.4 Ω
- Datasheets
- IRFAE42

N-Channel - - 800 V TO-204AA, TO-3
IRFAE42 Overview
4.4 A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 18 A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 800 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 800 V.
IRFAE42 Features
based on its rated peak drain current 18 A.
a 800 V drain to source voltage (Vdss)
IRFAE42 Applications
There are a lot of International Rectifier
IRFAE42 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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