IR2181PBF

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Mfr.Part #
IR2181PBF
Manufacturer
Infineon Technologies
Package / Case
8-DIP (0.300, 7.62mm)
Datasheet
Download
Description
IC GATE DRVR HALF-BRIDGE 8DIP
Stock
14,867
In Stock :
14,867

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Manufacturer :
Infineon Technologies
Product Category :
Gate Drivers
Radiation Hardening :
No
Output Peak Current Limit-Nom :
2.3A
Fall Time (Typ) :
35 ns
Rise Time :
60ns
Width :
7.11mm
Driven Configuration :
Half-Bridge
Height :
4.9276mm
Output Current :
1.9A
Turn Off Time :
0.33 μs
Turn On Delay Time :
270 ns
Logic Voltage - VIL, VIH :
0.8V 2.7V
Max Power Dissipation :
1W
Channel Type :
Independent
Voltage - Supply :
10V~20V
Turn-Off Delay Time :
330 ns
Supply Voltage :
15V
RoHS Status :
ROHS3 Compliant
Mount :
Through Hole
ECCN Code :
EAR99
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power Supplies :
15V
Factory Lead Time :
12 Weeks
Lead Free :
Lead Free
Length :
10.8966mm
Current - Peak Output (Source, Sink) :
1.9A 2.3A
Operating Temperature :
-40°C~150°C TJ
REACH SVHC :
No SVHC
High Side Voltage - Max (Bootstrap) :
600V
High Side Driver :
yes
Mounting Type :
Through Hole
Base Part Number :
IR2181PBF
Terminal Position :
Dual
Number of Functions :
1
Input Type :
Non-Inverting
Number of Drivers :
2
Max Output Current :
2.3A
Number of Terminations :
8
Number of Pins :
8
Propagation Delay :
330 ns
Power Dissipation :
1W
Packaging :
Tube
Gate Type :
IGBT, N-Channel MOSFET
Published :
1996
Rise / Fall Time (Typ) :
40ns 20ns
Package / Case :
8-DIP (0.300, 7.62mm)
Datasheets
IR2181PBF
Introducing Gate Drivers Infineon Technologies IR2181PBF from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-40°C~150°C TJ, Mounting Type:Through Hole, Base Part Number:IR2181PBF, Number of Terminations:8, Number of Pins:8, Package / Case:8-DIP (0.300, 7.62mm), IR2181PBF pinout, IR2181PBF datasheet PDF, IR2181PBF amp .Beyond Gate Drivers Infineon Technologies IR2181PBF ,we also offer FAN3180TSX, DGD2104MS8-13, IRS2005STRPBF, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IR2181PBF


Gate Drivers Infineon Technologies IR2181PBF Overview

The Infineon Technologies IR2181PBF, part of the highly reputable Gate Drivers category, is engineered to enhance system efficiency and reliability in various high-power switching applications. This half-bridge driver IC is specifically designed to operate with MOSFETs and IGBTs, facilitating optimal performance in a compact 8-DIP package. The integration of Infineon's advanced technology in the IR2181PBF ensures robust operation, making it an essential component for developers looking to optimize their power management systems. The use of the Gate Drivers Infineon Technologies IR2181PBF in your designs not only promises superior performance but also ensures a reduction in system complexity and BOM costs, appealing to B2B customers looking for scalable purchasing options.

IR2181PBF Features

The IR2181PBF boasts several key features that make it a standout choice for power electronic systems. These include an integrated high-voltage gate drive circuit, under-voltage lockout for both channels, and a 3.3V to 15V input compatible logic side. Additionally, its robust output drivers can handle up to 600V and provide peak currents of up to 2.5A, ensuring reliable switching and operational stability in high-stress environments.

IR2181PBF Applications

  • Motor Drive Control: Utilizes the IR2181PBF for efficient switching of MOSFETs and IGBTs in motor driver circuits, enhancing performance and energy efficiency in industrial automation systems.
  • Switch Mode Power Supplies (SMPS): Employs the IR2181PBF to facilitate fast switching in power supply units, critical for achieving high efficiency and power density in telecommunications and server applications.
  • Inductive Heating Systems: Takes advantage of the high current and voltage capabilities of the IR2181PBF to manage power in induction heating processes, ensuring consistent performance and safety.
  • Solar Inverters: Uses the IR2181PBF to drive power conversion processes in solar inverters, optimizing energy transfer from photovoltaic cells to the power grid.
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