IR2102SPBF

Manufacturer :

Infineon Technologies

Product Category :

Gate Drivers

High Side Driver :

yes

Max Junction Temperature (Tj) :

150°C

Logic Voltage - VIL, VIH :

0.8V 3V

Max Output Current :

360mA

Number of Pins :

8

Output Peak Current Limit-Nom :

0.36A

Fall Time (Typ) :

50 ns

Max Power Dissipation :

625mW

Published :

1996

Time@Peak Reflow Temperature-Max (s) :

30

Rise Time :

100ns

Turn On Delay Time :

160 ns

Terminal Finish :

Matte Tin (Sn)

Terminal Position :

Dual

Number of Functions :

1

Power Dissipation :

625mW

Moisture Sensitivity Level (MSL) :

2 (1 Year)

Mounting Type :

Surface Mount

Length :

4.9784mm

Turn-Off Delay Time :

150 ns

Gate Type :

IGBT, N-Channel MOSFET

Base Part Number :

IR2102SPBF

Ambient Temperature Range High :

125°C

Mount :

Surface Mount

ECCN Code :

EAR99

Driven Configuration :

Half-Bridge

High Side Voltage - Max (Bootstrap) :

600V

Height :

1.75mm

Channel Type :

Independent

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Number of Terminations :

8

Terminal Form :

Gull wing

Max Supply Current :

270μA

Number of Outputs :

2

Width :

3.9878mm

REACH SVHC :

No SVHC

Input Type :

Inverting

Peak Reflow Temperature (Cel) :

260

Rise / Fall Time (Typ) :

100ns 50ns

Radiation Hardening :

No

Power Supplies :

15V

Output Current :

210mA

Current - Peak Output (Source, Sink) :

210mA 360mA

Factory Lead Time :

12 Weeks

Output Voltage :

620V

JESD-609 Code :

e3

Voltage - Supply :

10V~20V

Propagation Delay :

220 ns

Operating Temperature :

-40°C~150°C TJ

Packaging :

Tube

Lead Free :

Lead Free

Nominal Supply Current :

150μA

Supply Voltage :

15V

RoHS Status :

ROHS3 Compliant