IR2102SPBF

Manufacturer :

Infineon Technologies

Product Category :

Gate Drivers

Ambient Temperature Range High :

125°C

Turn On Delay Time :

160 ns

Height :

1.75mm

High Side Driver :

yes

Propagation Delay :

220 ns

Output Current :

210mA

REACH SVHC :

No SVHC

Rise / Fall Time (Typ) :

100ns 50ns

Voltage - Supply :

10V~20V

Current - Peak Output (Source, Sink) :

210mA 360mA

Mounting Type :

Surface Mount

Fall Time (Typ) :

50 ns

ECCN Code :

EAR99

Max Supply Current :

270μA

Base Part Number :

IR2102SPBF

Peak Reflow Temperature (Cel) :

260

Width :

3.9878mm

Max Junction Temperature (Tj) :

150°C

Logic Voltage - VIL, VIH :

0.8V 3V

Power Dissipation :

625mW

Factory Lead Time :

12 Weeks

Radiation Hardening :

No

Channel Type :

Independent

Terminal Finish :

Matte Tin (Sn)

Supply Voltage :

15V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Moisture Sensitivity Level (MSL) :

2 (1 Year)

Operating Temperature :

-40°C~150°C TJ

Max Output Current :

360mA

Number of Functions :

1

JESD-609 Code :

e3

Length :

4.9784mm

Terminal Position :

Dual

Time@Peak Reflow Temperature-Max (s) :

30

Turn-Off Delay Time :

150 ns

Power Supplies :

15V

Output Peak Current Limit-Nom :

0.36A

Input Type :

Inverting

Max Power Dissipation :

625mW

Gate Type :

IGBT, N-Channel MOSFET

Published :

1996

RoHS Status :

ROHS3 Compliant

Nominal Supply Current :

150μA

Number of Terminations :

8

Number of Outputs :

2

Terminal Form :

Gull wing

Rise Time :

100ns

Driven Configuration :

Half-Bridge

Packaging :

Tube

Mount :

Surface Mount

Output Voltage :

620V

Number of Pins :

8

High Side Voltage - Max (Bootstrap) :

600V

Lead Free :

Lead Free