IR2102SPBF

Manufacturer :

Infineon Technologies

Product Category :

Gate Drivers

ECCN Code :

EAR99

Output Current :

210mA

Length :

4.9784mm

Height :

1.75mm

JESD-609 Code :

e3

Lead Free :

Lead Free

Max Output Current :

360mA

High Side Voltage - Max (Bootstrap) :

600V

Peak Reflow Temperature (Cel) :

260

Turn-Off Delay Time :

150 ns

Max Junction Temperature (Tj) :

150°C

Time@Peak Reflow Temperature-Max (s) :

30

Factory Lead Time :

12 Weeks

Gate Type :

IGBT, N-Channel MOSFET

Voltage - Supply :

10V~20V

Max Supply Current :

270μA

Input Type :

Inverting

Width :

3.9878mm

Ambient Temperature Range High :

125°C

Driven Configuration :

Half-Bridge

Logic Voltage - VIL, VIH :

0.8V 3V

Terminal Position :

Dual

Output Peak Current Limit-Nom :

0.36A

Propagation Delay :

220 ns

Published :

1996

RoHS Status :

ROHS3 Compliant

Number of Terminations :

8

Rise / Fall Time (Typ) :

100ns 50ns

Channel Type :

Independent

Power Supplies :

15V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Mount :

Surface Mount

Max Power Dissipation :

625mW

Mounting Type :

Surface Mount

Number of Pins :

8

Fall Time (Typ) :

50 ns

Number of Functions :

1

Terminal Form :

Gull wing

Supply Voltage :

15V

Number of Outputs :

2

Packaging :

Tube

Operating Temperature :

-40°C~150°C TJ

REACH SVHC :

No SVHC

Output Voltage :

620V

Radiation Hardening :

No

Rise Time :

100ns

Power Dissipation :

625mW

Nominal Supply Current :

150μA

Moisture Sensitivity Level (MSL) :

2 (1 Year)

Base Part Number :

IR2102SPBF

High Side Driver :

yes

Turn On Delay Time :

160 ns

Terminal Finish :

Matte Tin (Sn)

Current - Peak Output (Source, Sink) :

210mA 360mA