IR2102SPBF

Manufacturer :

Infineon Technologies

Product Category :

Gate Drivers

Max Junction Temperature (Tj) :

150°C

Published :

1996

Moisture Sensitivity Level (MSL) :

2 (1 Year)

Driven Configuration :

Half-Bridge

REACH SVHC :

No SVHC

Gate Type :

IGBT, N-Channel MOSFET

Operating Temperature :

-40°C~150°C TJ

Output Current :

210mA

High Side Driver :

yes

Width :

3.9878mm

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Number of Functions :

1

Logic Voltage - VIL, VIH :

0.8V 3V

Supply Voltage :

15V

Turn-Off Delay Time :

150 ns

Packaging :

Tube

High Side Voltage - Max (Bootstrap) :

600V

ECCN Code :

EAR99

Turn On Delay Time :

160 ns

Base Part Number :

IR2102SPBF

Rise / Fall Time (Typ) :

100ns 50ns

Height :

1.75mm

Nominal Supply Current :

150μA

Propagation Delay :

220 ns

Output Peak Current Limit-Nom :

0.36A

Factory Lead Time :

12 Weeks

Terminal Position :

Dual

Ambient Temperature Range High :

125°C

Mount :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

30

Radiation Hardening :

No

Length :

4.9784mm

RoHS Status :

ROHS3 Compliant

Power Supplies :

15V

Fall Time (Typ) :

50 ns

Number of Outputs :

2

Current - Peak Output (Source, Sink) :

210mA 360mA

Number of Pins :

8

Terminal Form :

Gull wing

Max Power Dissipation :

625mW

Terminal Finish :

Matte Tin (Sn)

Channel Type :

Independent

JESD-609 Code :

e3

Max Output Current :

360mA

Input Type :

Inverting

Voltage - Supply :

10V~20V

Peak Reflow Temperature (Cel) :

260

Number of Terminations :

8

Output Voltage :

620V

Lead Free :

Lead Free

Max Supply Current :

270μA

Power Dissipation :

625mW

Rise Time :

100ns

Mounting Type :

Surface Mount