IR2102PBF

Manufacturer :

Infineon Technologies

Product Category :

Gate Drivers

Output Voltage :

620V

Published :

1996

Driven Configuration :

Half-Bridge

Output Peak Current Limit-Nom :

0.36A

High Side Driver :

yes

Max Output Voltage :

20V

Rise Time :

170ns

Gate Type :

IGBT, N-Channel MOSFET

Number of Terminations :

8

Max Supply Current :

270μA

REACH SVHC :

No SVHC

Nominal Supply Current :

270μA

Channel Type :

Independent

Number of Functions :

1

Width :

7.112mm

Power Dissipation :

1W

Terminal Position :

Dual

Base Part Number :

IR2102PBF

High Side Voltage - Max (Bootstrap) :

600V

Logic Voltage - VIL, VIH :

0.8V 3V

Packaging :

Tube

Current - Peak Output (Source, Sink) :

210mA 360mA

Operating Temperature :

-40°C~150°C TJ

Max Power Dissipation :

1W

Propagation Delay :

220 ns

ECCN Code :

EAR99

Power Supplies :

15V

Mounting Type :

Through Hole

Output Current :

130mA

Height :

4.9276mm

Length :

10.8966mm

Min Output Voltage :

10V

Factory Lead Time :

12 Weeks

Turn On Delay Time :

160 ns

RoHS Status :

ROHS3 Compliant

Termination :

Through Hole

Number of Pins :

8

Number of Outputs :

2

Turn-Off Delay Time :

150 ns

Mount :

Through Hole

Rise / Fall Time (Typ) :

100ns 50ns

Supply Voltage :

15V

Package / Case :

8-DIP (0.300, 7.62mm)

Input Type :

Inverting

Fall Time (Typ) :

90 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Output Current :

360mA

Voltage - Supply :

10V~20V

Radiation Hardening :

No