IR2102PBF

Manufacturer :

Infineon Technologies

Product Category :

Gate Drivers

Propagation Delay :

220 ns

Mount :

Through Hole

Nominal Supply Current :

270μA

Voltage - Supply :

10V~20V

Output Current :

130mA

Gate Type :

IGBT, N-Channel MOSFET

Mounting Type :

Through Hole

Packaging :

Tube

Max Power Dissipation :

1W

Operating Temperature :

-40°C~150°C TJ

Factory Lead Time :

12 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

170ns

Terminal Position :

Dual

Min Output Voltage :

10V

Base Part Number :

IR2102PBF

Package / Case :

8-DIP (0.300, 7.62mm)

Termination :

Through Hole

Output Voltage :

620V

Logic Voltage - VIL, VIH :

0.8V 3V

Width :

7.112mm

Length :

10.8966mm

Radiation Hardening :

No

Driven Configuration :

Half-Bridge

High Side Driver :

yes

Max Output Current :

360mA

ECCN Code :

EAR99

Power Supplies :

15V

Current - Peak Output (Source, Sink) :

210mA 360mA

Supply Voltage :

15V

High Side Voltage - Max (Bootstrap) :

600V

Height :

4.9276mm

Number of Functions :

1

Number of Terminations :

8

Turn On Delay Time :

160 ns

Power Dissipation :

1W

Turn-Off Delay Time :

150 ns

Fall Time (Typ) :

90 ns

Channel Type :

Independent

REACH SVHC :

No SVHC

Published :

1996

Max Supply Current :

270μA

Max Output Voltage :

20V

Output Peak Current Limit-Nom :

0.36A

Number of Pins :

8

RoHS Status :

ROHS3 Compliant

Number of Outputs :

2

Rise / Fall Time (Typ) :

100ns 50ns

Input Type :

Inverting