IR2102PBF
- Mfr.Part #
- IR2102PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-DIP (0.300, 7.62mm)
- Datasheet
- Download
- Description
- IC GATE DRVR HALF-BRIDGE 8DIP
- Stock
- 208,177
- In Stock :
- 208,177
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Gate Drivers
- Number of Outputs :
- 2
- Termination :
- Through Hole
- Driven Configuration :
- Half-Bridge
- Published :
- 1996
- Package / Case :
- 8-DIP (0.300, 7.62mm)
- Propagation Delay :
- 220 ns
- Radiation Hardening :
- No
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Max Supply Current :
- 270μA
- High Side Voltage - Max (Bootstrap) :
- 600V
- Power Supplies :
- 15V
- Rise / Fall Time (Typ) :
- 100ns 50ns
- Max Power Dissipation :
- 1W
- Number of Terminations :
- 8
- Current - Peak Output (Source, Sink) :
- 210mA 360mA
- Height :
- 4.9276mm
- Mount :
- Through Hole
- Length :
- 10.8966mm
- REACH SVHC :
- No SVHC
- Max Output Current :
- 360mA
- Output Current :
- 130mA
- Operating Temperature :
- -40°C~150°C TJ
- Channel Type :
- Independent
- Turn-Off Delay Time :
- 150 ns
- Supply Voltage :
- 15V
- Packaging :
- Tube
- Power Dissipation :
- 1W
- High Side Driver :
- yes
- Number of Pins :
- 8
- Max Output Voltage :
- 20V
- Min Output Voltage :
- 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Fall Time (Typ) :
- 90 ns
- Output Voltage :
- 620V
- Base Part Number :
- IR2102PBF
- Width :
- 7.112mm
- Input Type :
- Inverting
- Turn On Delay Time :
- 160 ns
- Output Peak Current Limit-Nom :
- 0.36A
- Mounting Type :
- Through Hole
- Terminal Position :
- Dual
- Nominal Supply Current :
- 270μA
- Logic Voltage - VIL, VIH :
- 0.8V 3V
- Gate Type :
- IGBT, N-Channel MOSFET
- Rise Time :
- 170ns
- Number of Functions :
- 1
- Voltage - Supply :
- 10V~20V
- Factory Lead Time :
- 12 Weeks
- Datasheets
- IR2102PBF

Gate Drivers Infineon Technologies IR2102PBF Overview
The IR2102PBF from Infineon Technologies is a high-performance, half-bridge gate driver designed to enhance the efficiency and reliability of your power management systems. As a pivotal component in modern electronics, this gate driver specializes in optimizing switching performances of MOSFETs and IGBTs, ensuring minimal power loss and improved overall system efficiency. With its robust design and advanced features, the Gate Drivers Infineon Technologies IR2102PBF is ideal for developers looking to push the boundaries of power density and functionality in their applications.
IR2102PBF Features
The IR2102PBF gate driver includes several key features that make it an exceptional choice for driving both N-channel and P-channel MOSFETs or IGBTs. These features include independent high and low side referenced output channels, a bootstrap diode for higher efficiency, and under-voltage lockout for both channels. Additionally, its ability to operate up to 600V offers a versatile solution for managing high voltage requirements effectively.
IR2102PBF Applications
- Motors: Used in motor drive applications, the IR2102PBF efficiently handles the high-frequency PWM signals required for precise motor speed and torque control.
- Power Supplies: Integral in switch-mode power supplies, this driver ensures efficient switching of power components, reducing heat and increasing power supply reliability.
- DC-DC Converters: In DC-DC converters, the IR2102PBF manages the gate driving of MOSFETs or IGBTs, facilitating efficient power conversion and regulation.
- Inverters: Essential for inverter applications, from small-scale renewable energy systems to large industrial machines, providing reliable and efficient gate control.
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