IR2131JPBF
- Mfr.Part #
- IR2131JPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- 44-LCC (J-Lead), 32 Leads
- Datasheet
- Download
- Description
- IC GATE DRVR HALF-BRIDGE 44PLCC
- Stock
- 9,001
- In Stock :
- 9,001
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Gate Drivers
- Number of Terminations :
- 32
- Number of Drivers :
- 6
- Terminal Form :
- J BEND
- Rise / Fall Time (Typ) :
- 80ns 40ns
- Voltage - Supply :
- 10V~20V
- Rise Time :
- 150ns
- ECCN Code :
- EAR99
- Package / Case :
- 44-LCC (J-Lead), 32 Leads
- High Side Driver :
- yes
- Output Voltage :
- 20V
- Height :
- 4.572mm
- Number of Pins :
- 44
- Supply Voltage :
- 15V
- Width :
- 16.6624mm
- Propagation Delay :
- 2 μs
- Turn Off Time :
- 1 μs
- Power Dissipation :
- 2W
- Radiation Hardening :
- No
- Terminal Finish :
- Matte Tin (Sn)
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- Output Current :
- 160mA
- HTS Code :
- 8542.39.00.01
- Published :
- 1996
- Mounting Type :
- Surface Mount
- Turn-Off Delay Time :
- 600 ns
- High Side Voltage - Max (Bootstrap) :
- 600V
- Channel Type :
- Independent
- Logic Voltage - VIL, VIH :
- 0.8V 2.2V
- Length :
- 16.6624mm
- Output Peak Current Limit-Nom :
- 0.5A
- Gate Type :
- IGBT, N-Channel MOSFET
- Nominal Supply Current :
- 4.5mA
- Resistance :
- 75Ohm
- Driven Configuration :
- Half-Bridge
- Packaging :
- Tube
- Max Output Current :
- 500mA
- Factory Lead Time :
- 19 Weeks
- Current - Peak Output (Source, Sink) :
- 250mA 500mA
- Number of Functions :
- 3
- Terminal Position :
- QUAD
- JESD-30 Code :
- S-PQCC-J32
- Max Power Dissipation :
- 2W
- Fall Time (Typ) :
- 100 ns
- Mount :
- Surface Mount
- Turn On Delay Time :
- 1.3 μs
- Max Supply Current :
- 4.5mA
- Operating Temperature :
- -40°C~150°C TJ
- Power Supplies :
- 15V
- Base Part Number :
- IR2131JPBF
- Input Type :
- Inverting
- Terminal Pitch :
- 1.27mm
- Datasheets
- IR2131JPBF
IR2131JPBF Documents

Gate Drivers Infineon Technologies IR2131JPBF Overview
Introducing the IR2131JPBF from Infineon Technologies, a robust gate driver specifically designed to optimize the performance of half-bridge circuits. This IC gate driver combines advanced technology and precision engineering, making it an ideal solution for high-efficiency applications that require reliable switching. The IR2131JPBF is engineered to drive both N-channel and P-channel MOSFETs and IGBTs, ensuring versatile compatibility and enhanced performance in a variety of systems. The integration of this Gate Drivers Infineon Technologies IR2131JPBF enhances system reliability and efficiency, making it a preferred choice for developers looking to improve power management and conversion.
IR2131JPBF Features
The IR2131JPBF offers several key features that distinguish it from other gate drivers in the market. It provides a high-voltage capability of up to 600V, making it suitable for handling significant power levels. The device also supports three-phase motor applications by enabling better control over the half-bridge configurations. Its built-in protective features, such as under-voltage lockout, over-current shutdown, and thermal shutdown, ensure safe operation under a wide range of conditions, thus safeguarding your equipment from potential damage.
IR2131JPBF Applications
- Electric Vehicle Powertrains: Utilized in the driving of MOSFETs and IGBTs in electric vehicle (EV) inverters, enhancing efficiency and reliability in power conversion.
- Solar Inverters: Key component in solar power systems, converting DC to AC power efficiently while ensuring robust performance and longevity.
- UPS Systems: Critical in uninterruptible power supplies to maintain consistent operation and protection during power fluctuations and outages.
- Induction Heating Systems: Drives components in high-frequency induction heating, providing precise control to achieve energy efficiency and superior heat management.
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