IR2131JPBF
- Mfr.Part #
- IR2131JPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- 44-LCC (J-Lead), 32 Leads
- Datasheet
- Download
- Description
- IC GATE DRVR HALF-BRIDGE 44PLCC
- Stock
- 9,001
- In Stock :
- 9,001
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Gate Drivers
- HTS Code :
- 8542.39.00.01
- Propagation Delay :
- 2 μs
- RoHS Status :
- ROHS3 Compliant
- Max Power Dissipation :
- 2W
- Number of Drivers :
- 6
- Output Peak Current Limit-Nom :
- 0.5A
- Current - Peak Output (Source, Sink) :
- 250mA 500mA
- Number of Functions :
- 3
- Package / Case :
- 44-LCC (J-Lead), 32 Leads
- Terminal Finish :
- Matte Tin (Sn)
- High Side Voltage - Max (Bootstrap) :
- 600V
- Driven Configuration :
- Half-Bridge
- Packaging :
- Tube
- Length :
- 16.6624mm
- Number of Pins :
- 44
- Terminal Pitch :
- 1.27mm
- Power Supplies :
- 15V
- Rise Time :
- 150ns
- Width :
- 16.6624mm
- Turn Off Time :
- 1 μs
- Power Dissipation :
- 2W
- Output Voltage :
- 20V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -40°C~150°C TJ
- Factory Lead Time :
- 19 Weeks
- Resistance :
- 75Ohm
- Logic Voltage - VIL, VIH :
- 0.8V 2.2V
- Input Type :
- Inverting
- Output Current :
- 160mA
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Supply Voltage :
- 15V
- Gate Type :
- IGBT, N-Channel MOSFET
- Turn-Off Delay Time :
- 600 ns
- JESD-609 Code :
- e3
- Terminal Position :
- QUAD
- Number of Terminations :
- 32
- Mount :
- Surface Mount
- JESD-30 Code :
- S-PQCC-J32
- Height :
- 4.572mm
- Terminal Form :
- J BEND
- Base Part Number :
- IR2131JPBF
- Voltage - Supply :
- 10V~20V
- Max Output Current :
- 500mA
- ECCN Code :
- EAR99
- High Side Driver :
- yes
- Radiation Hardening :
- No
- Nominal Supply Current :
- 4.5mA
- Published :
- 1996
- Max Supply Current :
- 4.5mA
- Turn On Delay Time :
- 1.3 μs
- Channel Type :
- Independent
- Rise / Fall Time (Typ) :
- 80ns 40ns
- Fall Time (Typ) :
- 100 ns
- Datasheets
- IR2131JPBF

Gate Drivers Infineon Technologies IR2131JPBF Overview
Introducing the IR2131JPBF from Infineon Technologies, a robust gate driver specifically designed to optimize the performance of half-bridge circuits. This IC gate driver combines advanced technology and precision engineering, making it an ideal solution for high-efficiency applications that require reliable switching. The IR2131JPBF is engineered to drive both N-channel and P-channel MOSFETs and IGBTs, ensuring versatile compatibility and enhanced performance in a variety of systems. The integration of this Gate Drivers Infineon Technologies IR2131JPBF enhances system reliability and efficiency, making it a preferred choice for developers looking to improve power management and conversion.
IR2131JPBF Features
The IR2131JPBF offers several key features that distinguish it from other gate drivers in the market. It provides a high-voltage capability of up to 600V, making it suitable for handling significant power levels. The device also supports three-phase motor applications by enabling better control over the half-bridge configurations. Its built-in protective features, such as under-voltage lockout, over-current shutdown, and thermal shutdown, ensure safe operation under a wide range of conditions, thus safeguarding your equipment from potential damage.
IR2131JPBF Applications
- Electric Vehicle Powertrains: Utilized in the driving of MOSFETs and IGBTs in electric vehicle (EV) inverters, enhancing efficiency and reliability in power conversion.
- Solar Inverters: Key component in solar power systems, converting DC to AC power efficiently while ensuring robust performance and longevity.
- UPS Systems: Critical in uninterruptible power supplies to maintain consistent operation and protection during power fluctuations and outages.
- Induction Heating Systems: Drives components in high-frequency induction heating, providing precise control to achieve energy efficiency and superior heat management.
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