IR21271SPBF
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- Mfr.Part #
- IR21271SPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- IR21271S - GATE DRIVER
- Stock
- 9,270
- In Stock ：
- 9,270
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Gate Drivers
- Output Current :
- 200mA
- Gate Type :
- IGBT, N-Channel MOSFET
- Min Output Voltage :
- 9V
- JESD-609 Code :
- e3
- Current - Peak Output (Source, Sink) :
- 250mA 500mA
- Turn-Off Delay Time :
- 200 ns
- Supply Voltage :
- 15V
- Lead Free :
- Contains Lead, Lead Free
- Turn On Delay Time :
- 250 ns
- Fall Time (Typ) :
- 65 ns
- Moisture Sensitivity Level (MSL) :
- 2 (1 Year)
- Width :
- 3.9878mm
- Input Type :
- Non-Inverting
- Driven Configuration :
- High-Side or Low-Side
- Published :
- 1996
- Mounting Type :
- Surface Mount
- Turn On Time :
- 0.25 μs
- Nominal Supply Current :
- 120μA
- Resistance :
- 125Ohm
- Interface IC Type :
- BUFFER OR INVERTER BASED MOSFET DRIVER
- Max Output Current :
- 500mA
- Channel Type :
- Single
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Number of Pins :
- 8
- Number of Terminations :
- 8
- Output Peak Current Limit-Nom :
- 0.5A
- Base Part Number :
- IR21271SPBF
- Operating Temperature :
- -40°C~150°C TJ
- Logic Voltage - VIL, VIH :
- 0.8V 3V
- Terminal Form :
- Gull wing
- Length :
- 4.9784mm
- ECCN Code :
- EAR99
- Height :
- 1.4986mm
- Rise Time :
- 130ns
- Propagation Delay :
- 250 ns
- Number of Outputs :
- 1
- Terminal Finish :
- Matte Tin (Sn)
- Terminal Position :
- Dual
- RoHS Status :
- ROHS3 Compliant
- Termination :
- SMD/SMT
- Output Voltage :
- 20V
- Power Dissipation :
- 625mW
- REACH SVHC :
- No SVHC
- Number of Functions :
- 1
- High Side Voltage - Max (Bootstrap) :
- 600V
- Rise / Fall Time (Typ) :
- 80ns 40ns
- Radiation Hardening :
- No
- Turn Off Time :
- 0.2 μs
- Voltage - Supply :
- 9V~20V
- Max Power Dissipation :
- 625mW
- Max Output Voltage :
- 20V
- Packaging :
- Tube
- Mount :
- Surface Mount
- Factory Lead Time :
- 12 Weeks
- High Side Driver :
- yes
- Datasheets
- IR21271SPBF
Gate Drivers Infineon Technologies IR21271SPBF Overview
The IR21271SPBF from Infineon Technologies stands out as a robust gate driver designed to enhance the performance and reliability of your power management systems. This advanced component is engineered to drive both IGBTs and MOSFETs, facilitating higher efficiency in switching applications. With its ability to efficiently manage power and improve overall system stability, the IR21271SPBF gate driver is an essential choice for manufacturers looking to optimize their electronic designs. The incorporation of this gate driver ensures minimal propagation delays and maximized system responsiveness, making it a pivotal component in high-performance applications. This overview highlights the key benefits and sophisticated technology embedded in the Gate Drivers Infineon Technologies IR21271SPBF, aiming to attract B2B customers seeking volume procurement for top-tier electronics.
IR21271SPBF Features
The IR21271SPBF gate driver includes several features that make it highly suitable for demanding applications. It offers under-voltage lockout protection and a dedicated shutdown pin, which contribute to enhanced safety and operational reliability. Additionally, its high current driving capability ensures effective switching performance, which is crucial for high power applications. The component's robust design is also characterized by compatibility with high-voltage levels, further extending its usability across various electrical environments.
IR21271SPBF Applications
- Electric Vehicles: Utilizes high-efficiency gate driving to enhance the performance of power inverters used in electric vehicle drivetrains.
- Renewable Energy Systems: Improves the reliability and efficiency of converters used in solar and wind power installations.
- Industrial Motor Drives: Provides precise control and high driving current necessary for industrial motor control applications, ensuring robust operation under variable loads.
- Power Management Systems: Key component in managing power distribution and efficiency in complex systems like data centers and telecommunication networks.
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