IR2117STRPBF
- Mfr.Part #
- IR2117STRPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- IC GATE DRVR HIGH-SIDE 8SOIC
- Stock
- 15,802
- In Stock :
- 15,802
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Gate Drivers
- Terminal Form :
- Gull wing
- Type :
- Integrated Circuit (IC)
- Mounting Type :
- Surface Mount
- Max Power Dissipation :
- 625mW
- High Side Voltage - Max (Bootstrap) :
- 600V
- Operating Temperature :
- -40°C~150°C TJ
- Number of Functions :
- 1
- Lead Free :
- Contains Lead, Lead Free
- Number of Drivers :
- 1
- Base Part Number :
- IR2117SPBF
- Number of Terminations :
- 8
- Rise / Fall Time (Typ) :
- 80ns 40ns
- Turn On Delay Time :
- 200 ns
- Nominal Supply Current :
- 340µA
- High Side Driver :
- yes
- Max Supply Current :
- 340µA
- Channel Type :
- Single
- Supply Voltage :
- 15V
- Gate Type :
- IGBT, N-Channel MOSFET
- Mount :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Height :
- 1.4986mm
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- ECCN Code :
- EAR99
- Number of Pins :
- 8
- Turn On Time :
- 0.2 μs
- JESD-609 Code :
- e3
- REACH SVHC :
- No SVHC
- Length :
- 4.9784mm
- Width :
- 3.9878mm
- Packaging :
- Tape and Reel (TR)
- Terminal Position :
- Dual
- Current - Peak Output (Source, Sink) :
- 250mA 500mA
- Moisture Sensitivity Level (MSL) :
- 2 (1 Year)
- Output Peak Current Limit-Nom :
- 0.5A
- Published :
- 1996
- Radiation Hardening :
- No
- Output Voltage :
- 20V
- Logic Voltage - VIL, VIH :
- 6V 9.5V
- Power Dissipation :
- 625mW
- Fall Time (Typ) :
- 65 ns
- Rise Time :
- 130ns
- Terminal Finish :
- Matte Tin (Sn)
- Max Output Current :
- 250mA
- Output Current :
- 500mA
- Input Type :
- Non-Inverting
- Factory Lead Time :
- 12 Weeks
- Propagation Delay :
- 200 ns
- Driven Configuration :
- High-Side
- Voltage - Supply :
- 10V~20V
- Datasheets
- IR2117STRPBF

Gate Drivers Infineon Technologies IR2117STRPBF Overview
Introducing the IR2117STRPBF from Infineon Technologies, a robust and high-performance gate driver designed for managing high-side switching applications. This IC ensures reliable control of MOSFETs and IGBTs, making it an essential component for developers looking to optimize their power management systems. The device is housed in a compact 8SOIC package, making it suitable for space-constrained applications while maintaining a high level of performance. With its advanced features, the Gate Drivers Infineon Technologies IR2117STRPBF is engineered to enhance system efficiency and reliability, ideal for a variety of demanding applications.
IR2117STRPBF Features
The IR2117STRPBF gate driver offers numerous features that make it a standout choice for driving high-side switches. These include a floating channel designed for bootstrap operation up to 600V, making it suitable for both low and high side switching. It also provides a gate drive voltage of up to 20V, which is optimal for fast switching applications. Additionally, the device includes under-voltage lockout for both channels, ensuring that the device operates safely under all electrical conditions. The integrated shutdown function adds an extra layer of protection against fault conditions.
IR2117STRPBF Applications
- Motor Drive Controllers: In motor drive controllers, the IR2117STRPBF controls the high-side gate of a MOSFET or IGBT, allowing for precise speed and torque control in electric motors.
- Switch Mode Power Supplies (SMPS): This gate driver ensures efficient switching of power devices in SMPS circuits, enhancing power efficiency and reducing thermal load.
- Inductive Load Drivers: The IR2117STRPBF is ideal for driving inductive loads such as solenoids and transformers, providing the necessary gate charge for fast switching and reduced power dissipation.
- Renewable Energy Systems: In solar inverters and wind turbine converters, the IR2117STRPBF facilitates the efficient conversion of DC to AC, optimizing performance in renewable energy applications.
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