IR2113PBF
- Mfr.Part #
- IR2113PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- 14-DIP (0.300, 7.62mm)
- Datasheet
- Download
- Description
- IC GATE DRVR HALF-BRIDGE 14DIP
- Stock
- 45,065
- In Stock :
- 45,065
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Gate Drivers
- Package / Case :
- 14-DIP (0.300, 7.62mm)
- Rise Time :
- 35ns
- Number of Pins :
- 14
- Termination :
- SMD/SMT
- Mount :
- Surface Mount, Through Hole
- Width :
- 7.11mm
- Propagation Delay :
- 150 ns
- Height :
- 2.35mm
- Number of Functions :
- 1
- Terminal Position :
- Dual
- Turn On Delay Time :
- 20 ns
- Turn On Time :
- 0.15 μs
- Published :
- 1996
- Length :
- 10.4902mm
- Max Output Voltage :
- 20V
- Operating Supply Voltage :
- 15V
- Operating Temperature :
- -40°C~150°C TJ
- Max Output Current :
- 2A
- Max Supply Current :
- 340µA
- Reference Voltage :
- 600V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- Current - Peak Output (Source, Sink) :
- 2A 2A
- Output Peak Current Limit-Nom :
- 2.5A
- Max Power Dissipation :
- 1.25W
- Mounting Type :
- Through Hole
- Output Current :
- 2.5A
- Base Part Number :
- IR2113PBF
- Lead Free :
- Contains Lead, Lead Free
- Power Dissipation :
- 1.25W
- Number of Terminations :
- 14
- Packaging :
- Tube
- ECCN Code :
- EAR99
- Min Output Voltage :
- 10V
- Driven Configuration :
- Half-Bridge
- Supply Voltage :
- 15V
- Nominal Supply Current :
- 340µA
- Channel Type :
- Independent
- REACH SVHC :
- No SVHC
- Turn-Off Delay Time :
- 20 ns
- Output Voltage :
- 20V
- Number of Outputs :
- 2
- Gate Type :
- IGBT, N-Channel MOSFET
- Fall Time (Typ) :
- 25 ns
- High Side Driver :
- yes
- Input Type :
- Non-Inverting
- Factory Lead Time :
- 12 Weeks
- Voltage - Supply :
- 3.3V~20V
- Type :
- Integrated Circuit (IC)
- RoHS Status :
- ROHS3 Compliant
- Logic Voltage - VIL, VIH :
- 6V 9.5V
- Rise / Fall Time (Typ) :
- 25ns 17ns
- Datasheets
- IR2113PBF

Gate Drivers Infineon Technologies IR2113PBF Overview
The Infineon Technologies IR2113PBF is a robust gate driver specifically designed for half-bridge applications. This advanced integrated circuit is ideal for driving high-power, high-speed MOSFETs and IGBTs. With its dedicated design, the IR2113PBF facilitates efficient switching performance and enhanced system reliability, making it a top choice for developers seeking robust solutions in power management. This product leverages Infineon's leading-edge technology, ensuring superior performance in challenging environments, thus promoting bulk purchases by business-to-business customers.
IR2113PBF Features
The IR2113PBF gate driver offers a series of compelling features that ensure its effectiveness in various applications. It includes under-voltage lockout for both channels, independent high and low side output channels, and a propagation delay of typically 520 ns. These features allow for precise control and high efficiency in power switching applications.
IR2113PBF Applications
- Motor Drive Control: Utilizes in driving the high-side and low-side switches in motor driver applications, enhancing performance and reliability in devices such as electric vehicles and industrial automation systems.
- Switch Mode Power Supplies (SMPS): Employs its high-speed switching capability to improve efficiency and power density in SMPS designs, critical for telecommunications and computer applications.
- Renewable Energy Systems: Applied in solar inverters and wind turbine converters to effectively manage the power transfer and enhance the conversion efficiency, crucial for maximizing renewable energy utilization.
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