IR2111SPBF

Manufacturer :

Infineon Technologies

Product Category :

Gate Drivers

Voltage - Supply :

10V~20V

Output Current :

200mA

Max Output Current :

500mA

Nominal Supply Current :

180μA

Radiation Hardening :

No

Power Supplies :

15V

Factory Lead Time :

12 Weeks

Gate Type :

IGBT, N-Channel MOSFET

RoHS Status :

ROHS3 Compliant

Channel Type :

SYNCHRONOUS

Turn On Delay Time :

750 ns

Supply Voltage :

15V

Max Output Voltage :

20V

Lead Free :

Lead Free

ECCN Code :

EAR99

REACH SVHC :

No SVHC

Rise Time :

130ns

Power Dissipation :

625mW

Moisture Sensitivity Level (MSL) :

2 (1 Year)

Number of Outputs :

2

Terminal Form :

Gull wing

Mount :

Surface Mount

Terminal Position :

Dual

Output Voltage :

620V

High Side Voltage - Max (Bootstrap) :

600V

Number of Pins :

8

Rise / Fall Time (Typ) :

80ns 40ns

JESD-609 Code :

e3

Width :

3.9878mm

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Output Peak Current Limit-Nom :

0.5A

Terminal Finish :

Matte Tin (Sn)

Turn On Time :

0.95 μs

Termination :

SMD/SMT

Fall Time (Typ) :

65 ns

Height :

1.4986mm

Number of Terminations :

8

Mounting Type :

Surface Mount

Number of Functions :

1

Min Output Voltage :

10V

Max Supply Current :

180μA

Length :

4.9784mm

Propagation Delay :

950 ns

Packaging :

Tube

Current - Peak Output (Source, Sink) :

250mA 500mA

Published :

1996

Max Power Dissipation :

625mW

High Side Driver :

yes

Operating Temperature :

-40°C~150°C TJ

Driven Configuration :

Half-Bridge

Logic Voltage - VIL, VIH :

8.3V 12.6V

Input Type :

Non-Inverting

Base Part Number :

IR2111SPBF

Turn-Off Delay Time :

150 ns