IR2110SPBF

Manufacturer :

Infineon Technologies

Product Category :

Gate Drivers

Terminal Form :

Gull wing

Package / Case :

16-SOIC (0.295, 7.50mm Width)

Radiation Hardening :

No

Operating Supply Voltage :

15V

Height :

2.65mm

Max Supply Current :

340µA

Packaging :

Tube

ECCN Code :

EAR99

Max Output Voltage :

20V

Propagation Delay :

120 ns

Number of Outputs :

2

Published :

1996

Power Dissipation :

1.25W

Input Type :

Non-Inverting

RoHS Status :

ROHS3 Compliant

Rise Time :

25ns

Lead Free :

Contains Lead, Lead Free

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Finish :

Matte Tin (Sn)

Type :

Integrated Circuit (IC)

Number of Functions :

1

JESD-609 Code :

e3

High Side Driver :

yes

Max Junction Temperature (Tj) :

150°C

Output Peak Current Limit-Nom :

2.5A

Voltage - Supply :

3.3V~20V

Logic Voltage - VIL, VIH :

6V 9.5V

Reference Voltage :

500V

Number of Terminations :

16

Factory Lead Time :

12 Weeks

Channel Type :

Independent

Nominal Supply Current :

180μA

Mounting Type :

Surface Mount

Rise / Fall Time (Typ) :

25ns 17ns

Max Power Dissipation :

1.25W

Max Output Current :

2.5mA

Output Voltage :

520V

Turn-Off Delay Time :

94 ns

Supply Voltage :

15V

Turn On Delay Time :

120 ns

Min Output Voltage :

10V

Output Current :

2.5A

Turn On Time :

0.15 μs

Number of Pins :

16

Termination :

SMD/SMT

Fall Time (Typ) :

17 ns

Ambient Temperature Range High :

125°C

Base Part Number :

IR2110SPBF

Width :

7.5946mm

REACH SVHC :

No SVHC

Length :

10.4902mm

Current - Peak Output (Source, Sink) :

2A 2A

Mount :

Surface Mount

Operating Temperature :

-40°C~150°C TJ

Driven Configuration :

Half-Bridge

Terminal Position :

Dual

Peak Reflow Temperature (Cel) :

260

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Gate Type :

IGBT, N-Channel MOSFET