IR2110SPBF

Manufacturer :

Infineon Technologies

Product Category :

Gate Drivers

Power Dissipation :

1.25W

Number of Functions :

1

REACH SVHC :

No SVHC

Input Type :

Non-Inverting

Ambient Temperature Range High :

125°C

Package / Case :

16-SOIC (0.295, 7.50mm Width)

Max Power Dissipation :

1.25W

Radiation Hardening :

No

Operating Temperature :

-40°C~150°C TJ

Max Junction Temperature (Tj) :

150°C

Reference Voltage :

500V

RoHS Status :

ROHS3 Compliant

Output Peak Current Limit-Nom :

2.5A

Turn On Delay Time :

120 ns

Length :

10.4902mm

Voltage - Supply :

3.3V~20V

Number of Terminations :

16

Operating Supply Voltage :

15V

Peak Reflow Temperature (Cel) :

260

Propagation Delay :

120 ns

Number of Outputs :

2

Nominal Supply Current :

180μA

Type :

Integrated Circuit (IC)

Rise Time :

25ns

Max Output Current :

2.5mA

Terminal Form :

Gull wing

Height :

2.65mm

Mount :

Surface Mount

Rise / Fall Time (Typ) :

25ns 17ns

Current - Peak Output (Source, Sink) :

2A 2A

Min Output Voltage :

10V

Fall Time (Typ) :

17 ns

Time@Peak Reflow Temperature-Max (s) :

30

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Max Supply Current :

340µA

Published :

1996

Logic Voltage - VIL, VIH :

6V 9.5V

Terminal Position :

Dual

Turn-Off Delay Time :

94 ns

Driven Configuration :

Half-Bridge

High Side Driver :

yes

Factory Lead Time :

12 Weeks

Output Current :

2.5A

JESD-609 Code :

e3

Output Voltage :

520V

ECCN Code :

EAR99

Max Output Voltage :

20V

Turn On Time :

0.15 μs

Number of Pins :

16

Packaging :

Tube

Width :

7.5946mm

Base Part Number :

IR2110SPBF

Channel Type :

Independent

Mounting Type :

Surface Mount

Supply Voltage :

15V

Terminal Finish :

Matte Tin (Sn)

Termination :

SMD/SMT

Lead Free :

Contains Lead, Lead Free

Gate Type :

IGBT, N-Channel MOSFET