IR2108S
- Mfr.Part #
- IR2108S
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- IC GATE DRVR HALF-BRIDGE 8SOIC
- Stock
- 1,862
- In Stock :
- 1,862
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Gate Drivers
- Max Output Current :
- 350mA
- Rise Time :
- 220ns
- Logic Voltage - VIL, VIH :
- 0.8V 2.9V
- High Side Voltage - Max (Bootstrap) :
- 600V
- Output Voltage :
- 20V
- Turn On Time :
- 0.3 µs
- Width :
- 3.9878mm
- Turn-Off Delay Time :
- 200 ns
- Radiation Hardening :
- No
- Type :
- Integrated Circuit (IC)
- Number of Terminations :
- 8
- Base Part Number :
- IR2108SPBF
- Power Supplies :
- 15V
- Max Power Dissipation :
- 625mW
- Lead Free :
- Contains Lead, Lead Free
- ECCN Code :
- EAR99
- Output Peak Current Limit-Nom :
- 0.35A
- Number of Functions :
- 1
- Max Supply Current :
- 1.6mA
- Output Current :
- 200mA
- Nominal Supply Current :
- 1.6mA
- Fall Time (Typ) :
- 80 ns
- JESD-609 Code :
- e3
- Current - Peak Output (Source, Sink) :
- 200mA 350mA
- Terminal Position :
- Dual
- Rise / Fall Time (Typ) :
- 150ns 50ns
- Supply Voltage :
- 15V
- Additional Feature :
- FLOATING LOAD DRIVER; UNDER VOLTAGE LOCKOUT CIRCUIT
- Input Type :
- Non-Inverting
- Published :
- 1996
- Power Dissipation :
- 625mW
- Turn On Delay Time :
- 30 ns
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Driven Configuration :
- Half-Bridge
- Length :
- 4.9784mm
- Mounting Type :
- Surface Mount
- Factory Lead Time :
- 12 Weeks
- Mount :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tube
- Propagation Delay :
- 300 ns
- Moisture Sensitivity Level (MSL) :
- 2 (1 Year)
- Gate Type :
- IGBT, N-Channel MOSFET
- Height :
- 1.4986mm
- Operating Temperature :
- -40°C~150°C TJ
- High Side Driver :
- yes
- Terminal Finish :
- Matte Tin (Sn)
- Number of Pins :
- 8
- Number of Outputs :
- 2
- Voltage - Supply :
- 10V~20V
- REACH SVHC :
- No SVHC
- Channel Type :
- Independent
- Terminal Form :
- Gull wing
- Datasheets
- IR2108S
IR2108S Documents

Gate Drivers Infineon Technologies IR2108S Overview
The Infineon Technologies IR2108S is a high-performance, compact gate driver specifically designed for half-bridge configurations. This essential component from Infineon stands out in the market due to its robust output drive capability and innovative design, suitable for driving both high-side and low-side MOSFETs and IGBTs. The IR2108S is engineered to handle significant voltage levels while maintaining efficiency and reliability. Ideal for applications requiring precise control and high switching frequencies, this gate driver ensures optimal performance in various demanding environments. By integrating advanced features such as under-voltage lockout and matched propagation delays, the IR2108S offers a unique combination of power and precision, making it a top choice for developers and engineers focused on enhancing system reliability and performance.
IR2108S Features
The IR2108S gate driver is equipped with dual outputs for high-side and low-side switching, featuring a 600V maximum offset rating. Its robust design includes under-voltage lockout for both channels and an integrated bootstrap diode, simplifying the layout and enhancing overall system robustness. The driver's ability to support up to 3.3V and 5V input logic levels makes it versatile for integration into various circuit designs, further accommodating a wide range of power systems.
IR2108S Applications
- DC-AC Inverters: Utilized in converting DC to AC power, ensuring efficient switching and enhanced performance.
- Motor Control Systems: Key in driving motors in applications from electric vehicles to industrial automation, providing precise control over motor operations.
- Power Supply Units: Plays a critical role in managing power distribution and efficiency in servers and telecom infrastructure.
- Renewable Energy Systems: Essential in solar inverters and wind turbine converters, facilitating effective energy conversion and grid integration.
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