IR2106PBF
- Mfr.Part #
- IR2106PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-DIP (0.300, 7.62mm)
- Datasheet
- Download
- Description
- IC GATE DRVR HALF-BRIDGE 8DIP
- Stock
- 16,985
- In Stock :
- 16,985
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Gate Drivers
- Turn On Time :
- 0.3 µs
- Number of Functions :
- 1
- Driven Configuration :
- Half-Bridge
- Supply Voltage :
- 15V
- Number of Outputs :
- 2
- Termination :
- Through Hole
- Packaging :
- Tube
- ECCN Code :
- EAR99
- High Side Driver :
- yes
- Voltage - Supply :
- 10V~20V
- Number of Pins :
- 8
- Mount :
- Through Hole
- Width :
- 7.11mm
- Output Voltage :
- 620V
- Factory Lead Time :
- 12 Weeks
- Max Output Voltage :
- 20V
- Mounting Type :
- Through Hole
- Radiation Hardening :
- No
- Rise Time :
- 220ns
- Turn On Delay Time :
- 300 ns
- Rise / Fall Time (Typ) :
- 150ns 50ns
- Turn-Off Delay Time :
- 280 ns
- Additional Feature :
- FLOATING LOAD DRIVER; UNDER VOLTAGE LOCKOUT CIRCUIT
- Current - Peak Output (Source, Sink) :
- 200mA 350mA
- Published :
- 1996
- Terminal Position :
- Dual
- Channel Type :
- Independent
- Power Dissipation :
- 1W
- Max Output Current :
- 350mA
- Power Supplies :
- 15V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Input Type :
- Non-Inverting
- Output Peak Current Limit-Nom :
- 0.35A
- Number of Terminations :
- 8
- REACH SVHC :
- No SVHC
- Package / Case :
- 8-DIP (0.300, 7.62mm)
- Propagation Delay :
- 300 ns
- Length :
- 10.8966mm
- Min Output Voltage :
- 10V
- High Side Voltage - Max (Bootstrap) :
- 600V
- Gate Type :
- IGBT, N-Channel MOSFET
- Max Power Dissipation :
- 1W
- Operating Temperature :
- -40°C~150°C TJ
- Base Part Number :
- IR2106PBF
- Output Current :
- 200mA
- Logic Voltage - VIL, VIH :
- 0.8V 2.9V
- Height :
- 4.9276mm
- RoHS Status :
- ROHS3 Compliant
- Fall Time (Typ) :
- 80 ns
- Datasheets
- IR2106PBF

Gate Drivers Infineon Technologies IR2106PBF Overview
The Infineon Technologies IR2106PBF is a highly efficient and reliable half-bridge gate driver designed for superior performance in a wide range of applications. As a vital component in power electronics, this gate driver excels in managing power delivery with precision. The IR2106PBF is encapsulated in an 8-pin DIP package, making it suitable for compact designs yet robust enough for demanding environments. This driver integrates seamlessly with MOSFETs and IGBTs, enhancing system reliability and reducing electromagnetic interference (EMI). Its robust design and advanced technology make the Gate Drivers Infineon Technologies IR2106PBF an excellent choice for developers looking to enhance system efficiency and durability.
IR2106PBF Features
- Integrated high-voltage half-bridge driver
- Operates up to 600V
- High-side and low-side output channels
- Matched propagation delay for both channels
- Under-voltage lockout for both channels
- 3.3V and 5V input logic compatible
- Cross-conduction prevention logic
IR2106PBF Applications
- Motor Control Systems: Drives high- and low-side switches in motor controllers, enabling efficient and controlled motor operation in applications such as electric vehicles and industrial automation.
- Power Supplies: Utilized in switched-mode power supplies to enhance efficiency and reliability through precise gate driving, critical for maintaining voltage and current stability.
- Solar Inverters: Key component in solar inverters, facilitating the efficient conversion of DC to AC power, thus maximizing the effectiveness of solar panels.
- Electric Vehicle (EV) Inverters: Employs in driving the gates of MOSFETs or IGBTs in the inverter circuit of electric vehicles, ensuring high efficiency and rapid switching required for EV power management.
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