IPS65R950C6

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Technology :

Si

FET Type :

N-Channel

Transistor Type :

1 N-Channel

Transistor Polarity :

N-Channel

Continuous Drain Current :

4.5(A)

Maximum Operating Temperature :

+ 150 C

Length :

6.73 mm

Polarity :

N

Drain-Source On-Volt :

700(V)

FET Feature :

-

Mounting Style :

Through Hole

Width :

2.38 mm

Mounting :

Through Hole

Tradename :

CoolMOS

Power Dissipation :

37(W)

Package / Case :

TO-251-3

Product Type :

MOSFET

Rise Time :

5.2 ns

Gate-Source Voltage (Max) :

20(V)

Series :

CoolMOS C6

Number of Channels :

1 Channel

Number of Elements :

1

Package Type :

TO-251

Current - Continuous Drain (Id) @ 25°C :

4.5A (Tc)

Subcategory :

MOSFETs

Vgs(th) (Max) @ Id :

3.5V @ 200µA

Drain to Source Voltage (Vdss) :

650 V

Rad Hardened :

No

Pin Count :

3 +Tab

Operating Temp Range :

-55C to 150C

Supplier Device Package :

PG-TO251

Brand :

Infineon Technologies

Channel Mode :

Enhancement

Product Status :

Active

Packaging :

Rail/Tube

Mounting Type :

Through Hole

Minimum Operating Temperature :

- 55 C

Type :

Power MOSFET

Operating Temperature :

-55°C ~ 150°C (TJ)

Drive Voltage (Max Rds On, Min Rds On) :

10V

RoHS :

Details

Height :

6.22 mm

Manufacturer :

Infineon

Configuration :

Single

Product Category :

MOSFET

Power Dissipation (Max) :

37W (Tc)

Gate Charge (Qg) (Max) @ Vgs :

15.3 nC @ 10 V

Rds On (Max) @ Id, Vgs :

950mOhm @ 1.5A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

328 pF @ 100 V

Operating Temperature Classification :

Military

Package :

Bulk

Vgs (Max) :

±20V