IPS60R1K0CEAKMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Single

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Surface Mount :

No

Number of Elements :

1

Lead Free :

Contains Lead

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

12A

Min Operating Temperature :

-40°C

Configuration :

SINGLE WITH BUILT-IN DIODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Case Connection :

DRAIN

Drain to Source Voltage (Vdss) :

600V

ECCN Code :

EAR99

Published :

2013

Pbfree Code :

yes

Drain-source On Resistance-Max :

1Ohm

Max Dual Supply Voltage :

600V

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

46 mJ

Factory Lead Time :

18 Weeks

Terminal Finish :

Tin (Sn)

JEDEC-95 Code :

TO-251

Max Operating Temperature :

150°C

Number of Terminations :

3

JESD-30 Code :

R-PSIP-T3

RoHS Status :

ROHS3 Compliant

Reach Compliance Code :

not_compliant

Terminal Form :

THROUGH-HOLE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Polarity/Channel Type :

N-Channel

Transistor Application :

SWITCHING

Halogen Free :

Halogen Free